Invention Grant
- Patent Title: Wafer recovering method, wafer, and fabrication method
- Patent Title (中): 晶圆回收方法,晶圆和制造方法
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Application No.: US10943081Application Date: 2004-09-15
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Publication No.: US07344998B2Publication Date: 2008-03-18
- Inventor: Chun-Te Lin , Ta-Te Chen
- Applicant: Chun-Te Lin , Ta-Te Chen
- Applicant Address: TW Hsinchu
- Assignee: Mosel Vitelic, Inc.
- Current Assignee: Mosel Vitelic, Inc.
- Current Assignee Address: TW Hsinchu
- Agency: Townsend and Townsend and Crew LLP
- Priority: TW93114570A 20040521
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461

Abstract:
In order to use an etching solution of less complicated composition for recovering used wafers, embodiments of the present invention provide a recovering method, and also provide a kind of wafer, which is used as a process control wafer or dummy wafer, and fabrication methods. In one embodiment, a wafer-recovering method comprises providing a first wafer, wherein the first wafer has a base, a first conductive layer on the base, and a second conductive layer on the first conductive layer. The method further comprises removing the first and second conductive layers with an acidic solution to obtain a second wafer; and washing the second wafer with a liquid. The second conductive layer is formed on the first conductive layer in a deposition process, and the first conductive layer is more easily removed by the acidic solution than the second conductive layer.
Public/Granted literature
- US20050258138A1 Wafer recovering method, wafer, and fabrication method Public/Granted day:2005-11-24
Information query
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