Invention Grant
- Patent Title: High speed DRAM cache architecture
- Patent Title (中): 高速DRAM缓存架构
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Application No.: US11329994Application Date: 2006-01-10
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Publication No.: US07350016B2Publication Date: 2008-03-25
- Inventor: Kuljit S. Bains , Herbert Hum , John Halbert
- Applicant: Kuljit S. Bains , Herbert Hum , John Halbert
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Philip A. Pedigo
- Main IPC: G06F12/08
- IPC: G06F12/08

Abstract:
A high speed DRAM cache architecture. One disclosed embodiment includes a multiplexed bus interface to interface with a multiplexed bus. A cache control circuit drives a row address portion of an address on the multiplexed bus interface and a command to open a memory page containing data for a plurality of ways. The cache control circuit subsequently drives a column address including at least a way indicator to the multiplexed bus interface.
Public/Granted literature
- US20060117129A1 High speed DRAM cache architecture Public/Granted day:2006-06-01
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