发明授权
US07351607B2 Large scale patterned growth of aligned one-dimensional nanostructures
有权
对齐的一维纳米结构的大规模图案生长
- 专利标题： Large scale patterned growth of aligned one-dimensional nanostructures
- 专利标题（中）： 对齐的一维纳米结构的大规模图案生长
-
申请号： US11010178申请日： 2004-12-10
-
公开(公告)号： US07351607B2公开(公告)日： 2008-04-01
- 发明人: Zhong L. Wang , Christopher J. Summers , Xudong Wang , Elton D. Graugnard , Jeffrey King
- 申请人： Zhong L. Wang , Christopher J. Summers , Xudong Wang , Elton D. Graugnard , Jeffrey King
- 申请人地址： US GA Atlanta
- 专利权人： Georgia Tech Research Corporation
- 当前专利权人： Georgia Tech Research Corporation
- 当前专利权人地址： US GA Atlanta
- 代理机构： Bockhop & Associates LLC
- 代理商 Bryan W. Bockhop
- 主分类号： H01L51/40
- IPC分类号： H01L51/40
摘要：
A method of making nanostructures using a self-assembled monolayer of organic spheres is disclosed. The nanostructures include bowl-shaped structures and patterned elongated nanostructures. A bowl-shaped nanostructure with a nanorod grown from a conductive substrate through the bowl-shaped nanostructure may be configured as a field emitter or a vertical field effect transistor. A method of separating nanoparticles of a desired size employs an array of bowl-shaped structures.