Methods of forming semiconductor devices with high-k gate dielectric

Invention Grant

US07354830B2 Methods of forming semiconductor devices with high-k gate dielectric 有权

Title translation: 用高k栅极电介质形成半导体器件的方法

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Patent Title: Methods of forming semiconductor devices with high-k gate dielectric
Patent Title (中): 用高k栅极电介质形成半导体器件的方法
Application No.: US11377105

Application Date: 2006-03-16
Publication No.: US07354830B2

Publication Date: 2008-04-08
Inventor: Chun-Chieh Lin , Wen-Chin Lee , Chenming Hu , Shang-Chih Chen , Chih-Hao Wang , Fu-Liaog Yang , Yee-Chia Yeo
Applicant: Chun-Chieh Lin , Wen-Chin Lee , Chenming Hu , Shang-Chih Chen , Chih-Hao Wang , Fu-Liaog Yang , Yee-Chia Yeo
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Slater & Matsil, L.L.P.
Main IPC: H01L21/8234
IPC: H01L21/8234

Methods of forming semiconductor devices with high-k gate dielectric

Abstract:

A method of fabricating an integrated circuit is provided. A first gate dielectric portion is formed on a substrate in a first transistor region. The first gate dielectric portion includes a first high-permittivity dielectric material. The first gate dielectric portion has a first equivalent silicon oxide thickness. A second gate dielectric portion is formed on the substrate in a second transistor region. The second gate dielectric portion includes the first high-permittivity dielectric material. The second gate dielectric portion has a second equivalent silicon oxide thickness. The second equivalent silicon oxide thickness is different than the first equivalent silicon oxide thickness.

Abstract(Chinese):

提供一种制造集成电路的方法。第一栅介质部分形成在第一晶体管区域中的衬底上。第一栅介质部分包括第一高介电常数介电材料。第一栅介质部分具有第一等效氧化硅厚度。在第二晶体管区域中的衬底上形成第二栅介质部分。第二栅介质部分包括第一高电容率介电材料。第二栅介质部分具有第二等效氧化硅厚度。第二等效氧化硅厚度不同于第一等效氧化硅厚度。

Public/Granted literature

US20060177997A1 Methods of forming semiconductor devices with high-k gate dielectric Public/Granted day:2006-08-10

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺