Methods of forming a high dielectric constant dielectric layer are disclosed including providing a process chamber including a holder for supporting a substrate, introducing a first gas comprising a high dielectric constant (Hi-K) dielectric precursor and an oxygen (O2) oxidant into the process chamber to form a first portion of the high dielectric constant dielectric layer on the substrate, and switching from a flow of the first gas to a flow of a second gas comprising the Hi-K dielectric precursor and an ozone (O3) oxidant to form a second portion of the high dielectric constant dielectric layer on the first portion. In an alternative embodiment, another portion can be formed on the second portion using the oxygen oxidant. The invention increases throughput by at least 20% without reliability or leakage degradation and without the need for additional equipment.