发明授权
US07355281B2 Method for making semiconductor device having a high-k gate dielectric layer and a metal gate electrode
有权
制造具有高k栅极电介质层和金属栅电极的半导体器件的方法
- 专利标题： Method for making semiconductor device having a high-k gate dielectric layer and a metal gate electrode
- 专利标题（中）： 制造具有高k栅极电介质层和金属栅电极的半导体器件的方法
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申请号： US11393151申请日： 2006-03-29
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公开(公告)号： US07355281B2公开(公告)日： 2008-04-08
- 发明人: Justin K. Brask , Jack Kavalieros , Mark L. Doczy , Uday Shah , Chris E. Barns , Matthew V. Metz , Suman Datta , Annalisa Cappellani , Robert S. Chau
- 申请人： Justin K. Brask , Jack Kavalieros , Mark L. Doczy , Uday Shah , Chris E. Barns , Matthew V. Metz , Suman Datta , Annalisa Cappellani , Robert S. Chau
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： H01L29/40
- IPC分类号： H01L29/40
摘要：
A method for making a semiconductor device is described. That method comprises forming a first dielectric layer on a substrate, then forming a trench within the first dielectric layer. After forming a second dielectric layer on the substrate, a first metal layer is formed within the trench on a first part of the second dielectric layer. A second metal layer is then formed on the first metal layer and on a second part of the second dielectric layer.