发明授权
US07358179B2 Method of manufacturing semiconductor device including air space formed around gate electrode
有权
制造半导体器件的方法，包括围绕栅电极形成的空气空间
- 专利标题： Method of manufacturing semiconductor device including air space formed around gate electrode
- 专利标题（中）： 制造半导体器件的方法，包括围绕栅电极形成的空气空间
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申请号： US11295663申请日： 2005-12-07
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公开(公告)号： US07358179B2公开(公告)日： 2008-04-15
- 发明人: Tetsuya Ogawa , Toshiaki Kitano , Hiroyuki Minami
- 申请人： Tetsuya Ogawa , Toshiaki Kitano , Hiroyuki Minami
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Leydig, Voit & Mayer, Ltd.
- 优先权： JP2005-056898 20050302
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/44
摘要：
After a HEMT is formed, side walls are formed on a semiconductor substrate. Next, a sacrificial layer is formed to cover the HEMT. Next, contact holes are formed in the sacrificial layer to expose upper surfaces of source electrodes. Next, a metal interconnect line is formed by patterning a metal film formed on the entire top surface. Next, slits are formed in the metal interconnect line to partially expose an upper surface of the sacrificial layer. After the sacrificial layer is dissolved, the dissolved sacrificial layer is discharged through the slits to the outside. An air space is formed as a result of the removal of the sacrificial layer.
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