发明授权
- 专利标题： Non-volatile nanocrystal memory and method therefor
- 专利标题（中）： 非挥发性纳米晶体记忆及其方法
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申请号： US11043826申请日： 2005-01-26
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公开(公告)号： US07361567B2公开(公告)日： 2008-04-22
- 发明人: Rajesh A. Rao , Ramachandran Muralidhar , Bruce E. White
- 申请人： Rajesh A. Rao , Ramachandran Muralidhar , Bruce E. White
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 James L. Clingan, Jr.; Daniel D. Hill
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L21/20 ; H01L21/8242 ; H01L21/31 ; H01L21/469
摘要：
A nanocrystal non-volatile memory (NVM) has a dielectric between the control gate and the nanocrystals that has a nitrogen content sufficient to reduce the locations in the dielectric where electrons can be trapped. This is achieved by grading the nitrogen concentration. The concentration of nitrogen is highest near the nanocrystals where the concentration of electron/hole traps tend to be the highest and is reduced toward the control gate where the concentration of electron/hole traps is lower. This has been found to have the beneficial effect of reducing the number of locations where charge can be trapped.
公开/授权文献
- US20060166452A1 Non-volatile nanocrystal memory and method therefor 公开/授权日：2006-07-27
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