发明授权
- 专利标题： Passivative chemical mechanical polishing composition for copper film planarization
- 专利标题（中）： 钝化化学机械抛光组合物用于铜膜平面化
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申请号： US11117274申请日： 2005-04-28
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公开(公告)号： US07361603B2公开(公告)日： 2008-04-22
- 发明人: Jun Liu , Mackenzie King , Michael Darsillo , Karl E. Boggs , Jeffrey F. Roeder , Thomas H. Baum
- 申请人： Jun Liu , Mackenzie King , Michael Darsillo , Karl E. Boggs , Jeffrey F. Roeder , Thomas H. Baum
- 申请人地址： US CT Danbury
- 专利权人： Advanced Technology Materials, Inc.
- 当前专利权人： Advanced Technology Materials, Inc.
- 当前专利权人地址： US CT Danbury
- 代理机构： Moore & Van Allen PLLC
- 代理商 Chih-Sheng (Jason) Lin; Tristan A. Fuierer
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461
摘要：
A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent and a method of use. Such CMP composition may be diluted during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface during CMP processing.