发明授权
- 专利标题: Asymmetrical memory cells and memories using the cells
- 专利标题(中): 不对称存储单元和使用单元的存储器
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申请号: US11392071申请日: 2006-03-29
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公开(公告)号: US07362606B2公开(公告)日: 2008-04-22
- 发明人: Ching-Te Chuang , Jae-Joon Kim , Keunwoo Kim
- 申请人: Ching-Te Chuang , Jae-Joon Kim , Keunwoo Kim
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Ryan, Mason & Lewis, LLP
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
Techniques are provided for asymmetrical SRAM cells which can be improved, for example, by providing one or more of improved read stability and improved write performance and margin. A first inverter and a second inverter are cross-coupled and configured for selective coupling to true and complementary bit lines under control of read and write word lines. The first inverter is formed by a first, n-type, FET (NFET) and a second, p-type, FET (PFET). Process and/or technology approaches can be employed to adjust the relative strength of the FETS to obtain, for example, read margin, write margin, and/or write performance improvements.
公开/授权文献
- US20070236982A1 Asymmetrical memory cells and memories using the cells 公开/授权日:2007-10-11