发明授权
- 专利标题： Film formation apparatus and method of using the same
- 专利标题（中）： 成膜装置及其使用方法
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申请号： US11110931申请日： 2005-04-21
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公开(公告)号： US07368384B2公开(公告)日： 2008-05-06
- 发明人: Atsushi Endo , Tomonori Fujiwara , Yuichiro Morozumi , Katsushige Harada , Shigeru Nakajima , Dong-Kyun Choi , Haruhiko Furuya , Kazuo Yabe
- 申请人： Atsushi Endo , Tomonori Fujiwara , Yuichiro Morozumi , Katsushige Harada , Shigeru Nakajima , Dong-Kyun Choi , Haruhiko Furuya , Kazuo Yabe
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2004-127570 20040423; JP2005-075048 20050316
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A method of using a film formation apparatus for a semiconductor process includes a step of removing a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is performed while supplying a cleaning gas containing hydrogen fluoride into the reaction chamber, and forming a first atmosphere within the reaction chamber, which allows water to be present as a liquid film.
公开/授权文献
- US20050245099A1 Film formation apparatus and method of using the same 公开/授权日：2005-11-03
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