公开(公告)号：US20050245099A1

公开(公告)日：2005-11-03

申请号：US11110931

申请日：2005-04-21

申请人： Atsushi Endo ,  Tomonori Fujiwara ,  Yuichiro Morozumi ,  Katsushige Harada ,  Shigeru Nakajima ,  Dong-Kyun Choi ,  Haruhiko Furuya ,  Kazuo Yabe

发明人： Atsushi Endo ,  Tomonori Fujiwara ,  Yuichiro Morozumi ,  Katsushige Harada ,  Shigeru Nakajima ,  Dong-Kyun Choi ,  Haruhiko Furuya ,  Kazuo Yabe

IPC分类号： B08B5/00 ,  B08B7/00 ,  B08B7/04 ,  C23C16/00 ,  C23C16/44 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/469

CPC分类号： B08B7/0035 ,  C23C16/4405 ,  Y10S438/90

摘要： A method of using a film formation apparatus for a semiconductor process includes a step of removing a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is performed while supplying a cleaning gas containing hydrogen fluoride into the reaction chamber, and forming a first atmosphere within the reaction chamber, which allows water to be present as a liquid film.

摘要翻译： 使用半导体工艺的成膜装置的方法包括除去沉积在成膜装置的反应室的内表面上的副产物膜的步骤。 在向反应室供给含有氟化氢的清洁气体的同时进行该步骤，并且在反应室内形成允许水以液膜形式存在的第一气氛。

公开(公告)号：US07368384B2

公开(公告)日：2008-05-06

申请号：US11110931

申请日：2005-04-21

申请人： Atsushi Endo ,  Tomonori Fujiwara ,  Yuichiro Morozumi ,  Katsushige Harada ,  Shigeru Nakajima ,  Dong-Kyun Choi ,  Haruhiko Furuya ,  Kazuo Yabe

发明人： Atsushi Endo ,  Tomonori Fujiwara ,  Yuichiro Morozumi ,  Katsushige Harada ,  Shigeru Nakajima ,  Dong-Kyun Choi ,  Haruhiko Furuya ,  Kazuo Yabe

IPC分类号： H01L21/302

CPC分类号： B08B7/0035 ,  C23C16/4405 ,  Y10S438/90

摘要： A method of using a film formation apparatus for a semiconductor process includes a step of removing a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is performed while supplying a cleaning gas containing hydrogen fluoride into the reaction chamber, and forming a first atmosphere within the reaction chamber, which allows water to be present as a liquid film.

摘要翻译： 使用半导体工艺的成膜装置的方法包括除去沉积在成膜装置的反应室的内表面上的副产物膜的步骤。 在向反应室供给含有氟化氢的清洁气体的同时进行该步骤，并且在反应室内形成允许水以液膜形式存在的第一气氛。

公开(公告)号：US07041546B2

公开(公告)日：2006-05-09

申请号：US10639773

申请日：2003-08-13

申请人： Yuichiro Morozumi ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Haruhiko Furuya ,  Dong-Kyun Choi ,  Takahito Umehara ,  Katsushige Harada ,  Tomonori Fujiwara ,  Hirotake Fujita

发明人： Yuichiro Morozumi ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Haruhiko Furuya ,  Dong-Kyun Choi ,  Takahito Umehara ,  Katsushige Harada ,  Tomonori Fujiwara ,  Hirotake Fujita

IPC分类号： H01L21/8238

CPC分类号： H01L28/56 ,  H01L21/31612 ,  H01L21/31637 ,  H01L21/31645 ,  H01L28/40

摘要： In a capacitor of an MIM (Metal-Insulator-Metal) structure, a silicon-containing high dielectric film (e.g., a hafnium silicate film) containing a silicon atom, as well as a silicon-free high dielectric film (e.g., a tantalum oxide film) containing no silicon atom is interposed between a lower electrode film and an upper electrode film which are made of metal or metal compound. By adding the silicon-containing high dielectric film, a leak current can be suppressed and the change in capacitor capacity accompanied with the change in applied voltage can be reduced.

摘要翻译： 在MIM（金属 - 绝缘体 - 金属）结构的电容器中，含有硅原子的含硅高电介质膜（例如，硅酸铪膜）以及无硅高介电膜（例如，钽 不含硅原子的氧化膜插入由金属或金属化合物制成的下电极膜和上电极膜之间。 通过添加含硅高介电膜，可以抑制泄漏电流，并且可以减少伴随施加电压变化的电容器容量的变化。

公开(公告)号：US20060216953A1

公开(公告)日：2006-09-28

申请号：US10552468

申请日：2004-04-08

申请人： Shigeru Nakajima ,  Dong-Kyun Choi ,  Tomonori Fujiwara ,  Hiroaki Ikegawa ,  Genji Nakamura

发明人： Shigeru Nakajima ,  Dong-Kyun Choi ,  Tomonori Fujiwara ,  Hiroaki Ikegawa ,  Genji Nakamura

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02148 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/31645

摘要： The object of the present invention is to increase the crystallization temperature of a hafnium compound film which can be effectively used as a high dielectric constant film of a gate oxide film of a MOSFET, for example. A hafnium silicate film is deposited on a substrate by reacting a vapor of a hafnium organic compound with a monosilane gas or a disilane gas in a reaction vessel in a heated vacuum atmosphere. Due to the crystallization restraining effect of silicon, the thus obtained film has a higher crystallization temperature. In another embodiment of the present invention, an oxygen-containing hafnium compound film is annealed in a heated ammonia gas atmosphere. The annealing also increase the crystallization temperature of the oxygen-containing hafnium compound film.

摘要翻译： 本发明的目的是提高可以有效地用作MOSFET的栅极氧化膜的高介电常数膜的铪化合物膜的结晶温度。 通过使铪有机化合物的蒸气与甲硅烷气体或乙硅烷气体在加热的真空气氛中在反应容器中反应，将硅酸铪膜沉积在基材上。 由于硅的结晶抑制效果，所得到的膜具有较高的结晶温度。 在本发明的另一个实施方案中，将含氧铪化合物膜在加热的氨气气氛中退火。 退火还增加含氧铪复合膜的结晶温度。

公开(公告)号：US07084023B2

公开(公告)日：2006-08-01

申请号：US10976320

申请日：2004-10-29

申请人： Shigeru Nakajima ,  Dong-Kyun Choi ,  Tomonori Fujiwara ,  Hiroaki Ikegawa ,  Genji Nakamura

发明人： Shigeru Nakajima ,  Dong-Kyun Choi ,  Tomonori Fujiwara ,  Hiroaki Ikegawa ,  Genji Nakamura

IPC分类号： H01L21/336 ,  H01L21/8234

CPC分类号： H01L29/513 ,  H01L21/28194 ,  H01L29/517 ,  H01L29/78

摘要： In a decompressed atmosphere and a heating atmosphere, a vapor of a hafnium organic compound is reacted with, e.g., a disilane gas in a reacting vessel, so as to form a hafnium silicate film on a silicon film. By reacting a dichlorosilane gas with a dinitrogen oxide gas, a silicon oxide film as a barrier layer is laminated on the hafnium silicate film. A polysilicon film as a gate electrode is formed on the silicon oxide film.

摘要翻译： 在减压气氛和加热气氛中，使铪有机化合物的蒸气与例如反应容器中的乙硅烷气体反应，以在硅膜上形成硅酸铪膜。 通过使二氯硅烷气体与二氧化氮气体反应，将作为阻挡层的氧化硅膜层压在硅酸铪膜上。 在氧化硅膜上形成作为栅电极的多晶硅膜。

公开(公告)号：US20050142716A1

公开(公告)日：2005-06-30

申请号：US10976320

申请日：2004-10-29

申请人： Shigeru Nakajima ,  Dong-Kyun Choi ,  Tomonori Fujiwara ,  Hiroaki Ikegawa ,  Genji Nakamura

发明人： Shigeru Nakajima ,  Dong-Kyun Choi ,  Tomonori Fujiwara ,  Hiroaki Ikegawa ,  Genji Nakamura

IPC分类号： H01L21/336 ,  H01L21/28 ,  H01L29/51 ,  H01L29/78

CPC分类号： H01L29/513 ,  H01L21/28194 ,  H01L29/517 ,  H01L29/78

摘要： In a decompressed atmosphere and a heating atmosphere, a vapor of a hafnium organic compound is reacted with, e.g., a disilane gas in a reacting vessel, so as to form a hafnium silicate film on a silicon film. By reacting a dichlorosilane gas with a dinitrogen oxide gas, a silicon oxide film as a barrier layer is laminated on the hafnium silicate film. A polysilicon film as a gate electrode is formed on the silicon oxide film.

摘要翻译： 在减压气氛和加热气氛中，使铪有机化合物的蒸气与例如反应容器中的乙硅烷气体反应，以在硅膜上形成硅酸铪膜。 通过使二氯硅烷气体与二氧化氮气体反应，将作为阻挡层的氧化硅膜层压在硅酸铪膜上。 在氧化硅膜上形成作为栅电极的多晶硅膜。

公开(公告)号：US07622402B2

公开(公告)日：2009-11-24

申请号：US10509371

申请日：2003-03-31

申请人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Tomonori Fujiwara

发明人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Tomonori Fujiwara

IPC分类号： H01L21/31

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31604 ,  H01L21/31645 ,  H01L21/31662 ,  H01L28/56 ,  H01L29/517 ,  H01L29/518

摘要： The surface of an insulating film disposed on an electronic device substrate is irradiated with plasma based on a process gas comprising at least an oxygen atom-containing gas, to thereby form an underlying film at the interface between the insulating film and the electronic device substrate. A good underlying film is provided at the interface between the insulating film and the electronic device substrate, so that the thus formed underlying film can improve the property of the insulating film.

摘要翻译： 基于包含至少含氧原子气体的工艺气体，等离子体照射设置在电子器件基板上的绝缘膜的表面，从而在绝缘膜和电子器件基板之间的界面处形成下面的膜。 在绝缘膜和电子器件基板之间的界面处提供了良好的底层膜，从而使得这样形成的底膜能够提高绝缘膜的性能。

公开(公告)号：US08021987B2

公开(公告)日：2011-09-20

申请号：US12632131

申请日：2009-12-07

申请人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Tomonori Fujiwara

发明人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Tomonori Fujiwara

IPC分类号： H01L21/38 ,  H01L21/469

CPC分类号： H01L21/02112 ,  H01L21/0234 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31658 ,  H01L29/518 ,  H01L29/78

摘要： An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.

摘要翻译： 通过对绝缘膜进行包括等离子体处理和热退火处理的组合的改性处理来修饰绝缘膜。 通过改善绝缘膜中所含的碳，低氧化物，悬挂键等导致的绝缘膜的特性劣化，提供了提高绝缘膜特性的方法。

公开(公告)号：US07655574B2

公开(公告)日：2010-02-02

申请号：US11289330

申请日：2005-11-30

申请人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Tomonori Fujiwara

发明人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Tomonori Fujiwara

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02112 ,  H01L21/0234 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31658 ,  H01L29/518 ,  H01L29/78

摘要： An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.

摘要翻译： 通过对绝缘膜进行包括等离子体处理和热退火处理的组合的改性处理来修饰绝缘膜。 通过改善绝缘膜中所含的碳，低氧化物，悬挂键等导致的绝缘膜的特性劣化，提供了提高绝缘膜特性的方法。

公开(公告)号：US20060199398A1

公开(公告)日：2006-09-07

申请号：US11289330

申请日：2005-11-30

申请人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Tomonori Fujiwara

发明人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Tomonori Fujiwara

IPC分类号： H01L21/00

CPC分类号： H01L21/02112 ,  H01L21/0234 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31658 ,  H01L29/518 ,  H01L29/78

摘要： An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.

摘要翻译： 通过对绝缘膜进行包括等离子体处理和热退火处理的组合的改性处理来修饰绝缘膜。 通过改善绝缘膜中所含的碳，低氧化物，悬挂键等导致的绝缘膜的特性劣化，提供了提高绝缘膜特性的方法。