发明授权
- 专利标题： Semiconductor light emitting element and method for fabricating the same
- 专利标题（中）： 半导体发光元件及其制造方法
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申请号： US10891968申请日： 2004-07-15
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公开(公告)号： US07368766B2公开(公告)日： 2008-05-06
- 发明人: Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
- 申请人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： RatnerPrestia
- 优先权： JP7-006405 19950119
- 主分类号： H01L31/072
- IPC分类号： H01L31/072
摘要：
The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.