发明授权
US07371663B2 Three dimensional IC device and alignment methods of IC device substrates
有权
IC器件基板的三维IC器件和对准方法
- 专利标题: Three dimensional IC device and alignment methods of IC device substrates
- 专利标题(中): IC器件基板的三维IC器件和对准方法
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申请号: US11174511申请日: 2005-07-06
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公开(公告)号: US07371663B2公开(公告)日: 2008-05-13
- 发明人: Hsueh-Chung Chen , Chine-Gie Lou , Su-Chen Fan
- 申请人: Hsueh-Chung Chen , Chine-Gie Lou , Su-Chen Fan
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Birch, Stewart, Kolasch & Birch, LLP
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
Alignment methods of IC device substrates. A first IC device substrate has a first front side for defining a plurality of first IC features, a first backside opposite the first front side, and a first alignment pattern formed on the first front side or the first backside. A second IC device substrate has a second front side for defining a plurality of second IC features, a second backside opposite the second front side, and a second alignment pattern formed on the second front side or the second backside. A first optical detector and a second optical detector are applied to detect the first and second alignment patterns, so as to align the first and second IC device substrates. Specifically, the first and second alignment patterns face toward the first and second optical detectors in opposite directions.
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