发明授权
- 专利标题: Method to fabricate aligned dual damascene openings
- 专利标题(中): 制造对准双镶嵌开口的方法
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申请号: US11174805申请日: 2005-07-05
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公开(公告)号: US07372156B2公开(公告)日: 2008-05-13
- 发明人: Yeow Kheng Lim , Wuping Liu , Tae Jong Lee , Bei Chao Zhang , Juan Boon Tan , Alan Cuthbertson , Chin Chuan Neo
- 申请人: Yeow Kheng Lim , Wuping Liu , Tae Jong Lee , Bei Chao Zhang , Juan Boon Tan , Alan Cuthbertson , Chin Chuan Neo
- 申请人地址: SG Singapore
- 专利权人: Chartered Semiconductor Manufacturing Ltd.
- 当前专利权人: Chartered Semiconductor Manufacturing Ltd.
- 当前专利权人地址: SG Singapore
- 代理机构: Saile Ackerman LLC
- 代理商 Stephen B. Ackerman; Stephen G. Stanton
- 主分类号: H01L29/40
- IPC分类号: H01L29/40
摘要:
An aligned dual damascene opening structure, comprising the following. A structure having a metal structure formed thereover. A patterned layer stack over the metal structure; the layer stack comprising, in ascending order: a patterned bottom etch stop layer; a patterned lower dielectric material layer; a patterned middle etch stop layer; and a patterned middle dielectric material layer; the lower and middle dielectric layers being comprised of the same material. An upper trench opening in the patterned bottom etch stop layer and the patterned lower dielectric material layer; and a lower via opening in the patterned middle etch stop layer and the patterned middle dielectric material layer. The lower via opening being in communication with the upper trench opening. Wherein the upper trench opening and the lower via opening comprise an aligned dual damascene opening.
公开/授权文献
- US20060003573A1 Method to fabricate aligned dual damacene openings 公开/授权日:2006-01-05