发明授权
- 专利标题： Method of making current-perpendicular-to-the-plane structure magnetoresistive element
- 专利标题（中）： 制造电流垂直于平面结构的磁阻元件的方法
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申请号： US11431757申请日： 2006-05-10
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公开(公告)号： US07377026B2公开(公告)日： 2008-05-27
- 发明人: Shin Eguchi , Chikayoshi Kamata , Junya Ikeda , Atsushi Tanaka
- 申请人： Shin Eguchi , Chikayoshi Kamata , Junya Ikeda , Atsushi Tanaka
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Greer, Burns & Crain, Ltd.
- 优先权： JP2001-134973 20010502
- 主分类号： G11B5/187
- IPC分类号： G11B5/187
摘要：
A magnetoresistive film is formed on the surface of a lower electrode layer in a method of making a current-perpendicular-to-the-plane structure magnetoresistive element. The magnetoresistive film includes a lower portion and an upper portion overlaid on the lower portion. The lower portion includes at least a pinned magnetic layer. The upper portion includes at least a free magnetic layer. A pair of domain control magnetic layers is formed to sandwich the magnetoresistive film. An insulator film is formed to cover over the domain control magnetic layers. The upper portion is subjected to an etching process. The domain control magnetic layers are reliably prevented from being removed during the etching process. Accordingly, the domain control magnetic layers are allowed to reliably sandwich the upper portion of the magnetoresistive film in the aforementioned manner.
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