摘要:
A magnetoresistive film is formed on the surface of a lower electrode layer in a method of making a current-perpendicular-to-the-plane structure magnetoresistive element. The magnetoresistive film includes a lower portion and an upper portion overlaid on the lower portion. The lower portion includes at least a pinned magnetic layer. The upper portion includes at least a free magnetic layer. A pair of domain control magnetic layers is formed to sandwich the magnetoresistive film. An insulator film is formed to cover over the domain control magnetic layers. The upper portion is subjected to an etching process. The domain control magnetic layers are reliably prevented from being removed during the etching process. Accordingly, the domain control magnetic layers are allowed to reliably sandwich the upper portion of the magnetoresistive film in the aforementioned manner.
摘要:
The lower electrode is at least exposed at the surface of a substructure layer in a current-perpendicular-to-the-plane structure magnetoresistive element. A resist is formed to extend over the surface of the substructure layer. A patterning void is defined in the resist. The shape of the patterning void is designed to correspond to the contour of the magnetoresistive multilayered film. The magnetoresistive multilayered film is formed by deposition within the patterning void. This method enables avoidance of a dry etching process effected on the magnetoresistive multilayered film. Scrapings or waste of the magnetoresistive multilayered film are not generated at all. The side surfaces of the magnetoresistive multilayered film are completely prevented from attachment or adhesion of scrapings or waste. The side surfaces of the magnetoresistive multilayered film are kept stainless.
摘要:
Disclosed herein is a spin valve magnetoresistive sensor including a first conductor layer, a free ferromagnetic layer provided on the first conductor layer, a nonmagnetic intermediate layer provided on the free ferromagnetic layer, a pinned ferromagnetic layer provided on the nonmagnetic intermediate layer, an antiferromagnetic layer provided on the pinned ferromagnetic layer, and a second conductor layer provided on the antiferromagnetic layer. At least one of the free ferromagnetic layer and the pinned ferromagnetic layer has a thickness larger than that providing a maximum resistance change rate or resistance change amount in the case of passing a current in an in-plane direction of the at least one layer. That is, the thickness of at least one of the free ferromagnetic layer and the pinned ferromagnetic layer falls in the range of 3 nm to 12 nm.
摘要:
An optical deflector device includes a VGM cell including a film of a nematic liquid crystal material which generates a distribution of spatial frequencies when subjected to an electric field. A film thickness setting unit sets a thickness distribution of the film in the VGM cell in accordance with a film thickness distribution defined by a predetermined function.
摘要:
A headup display including a light emission-type display source, a concave mirror having an spherical reflecting surface and located so as to reflect light emitted from the display source, and a reflection-type hologram located so as to reflect the light reflected on the concave mirror toward an observer in a mobile unit. The concave mirror is configured so that its lateral focal length contributing to lateral enlargement of a displayed image is shorter than its longitudinal focal length contributing to longitudinal enlargement of the displayed image. The reflection-type hologram is configured so that its longitudinal focal length contributing to longitudinal enlargement of the displayed image is shorter than its lateral focal length contributing to lateral enlargement of the displayed image.
摘要:
The method for fabricating the magnetic head comprises the step of forming over a lower electrode a magnetoresistive effect film 16 with a polishing resistant film 20 formed over the upper surface, the step of forming a magnetic domain control film 24 over the entire surface of the lower electrode 12 including a region where the magnetoresistive effect film 16 has been formed, the step of selectively removing the magnetic domain control film 24 over the magnetoresistive effect film 16 by polishing with the polishing resistant film 20 as the stopper, the step of removing the polishing resistant film 20, and the step of forming an upper electrode 34 over the magnetoresistive effect film 16, from which the polishing resistant film 20 has been removed.
摘要:
The upper portion of a magnetoresistive film is interposed between insulators in the lateral direction of a recording track in a current-perpendicular-to-the-plane structure magnetoresistive element. Domain control magnetic layers sandwich the upper portion of the magnetoresistive film along with the insulators in the lateral direction. The insulators serve to establish a narrower path for electric current between the lower portion of the magnetoresistive film and an upper electrode layer. The substantial width in the lateral direction can thus be reduced in the magnetoresistive film. In addition, a longitudinal biasing magnetic field established between the domain control magnetic layers efficiently acts on the magnetoresistive film. In particular, if a free magnetic layer is included in the upper portion of the magnetoresistive film, the free magnetic layer can be subjected to a larger longitudinal biasing magnetic field. A single domain property can be realized in the free ferromagnetic layer enough. The Barkhausen noise can be reduced.
摘要:
Disclosed herein is a spin valve magnetoresistive sensor including a first conductor layer, a free ferromagnetic layer provided on the first conductor layer, a nonmagnetic intermediate layer provided on the free ferromagnetic layer, a pinned ferromagnetic layer provided on the nonmagnetic intermediate layer, an antiferromagnetic layer provided on the pinned ferromagnetic layer, and a second conductor layer provided on the antiferromagnetic layer. At least one of the free ferromagnetic layer and the pinned ferromagnetic layer has a thickness larger than that providing a maximum resistance change rate or resistance change amount in the case of passing a current in an in-plane direction of the at least one layer. That is, the thickness of at least one of the free ferromagnetic layer and the pinned ferromagnetic layer falls in the range of 3 nm to 12 nm.
摘要:
A magnetoresistive head including a first magnetic shield, a first electrode terminal provided on the first magnetic shield and having a first width, and a magnetoresistive film provided on the first electrode terminal and having a second width less than or equal to the first width. The magnetoresistive head further includes a second electrode terminal provided on the magnetoresistive film and having a third width less than or equal to the second width, and a second magnetic shield provided on the second electrode terminal. Preferably, the magnetoresistive head further includes a plug electrode for connecting the second electrode terminal to the second magnetic shield, and a plug side wall protective insulating film for covering a side wall of the plug electrode.
摘要:
An apparatus for deflecting light of the present invention comprises: (a) at least one pair of transference electrodes arranged facing one another; (b) a drive circuit which applies a voltage among the transference electrodes; and (c) a liquid crystal which is inserted among the transference electrodes, and whose parallel stripes that function as a diffraction grating when the voltage is applied among the transference electrodes are produced at a pitch corresponding to the applied voltage. The light can be scanned if a diffracted light by the apparatus for deflecting light is converted into a scanning light and a voltage value is changed temporally to apply the voltage among the transference electrodes. In a device for reading information, the scanning light is reflected in a bar code and the reflected light is detected by an apparatus for detecting light. In a device for stereoscopic display of the present invention, the apparatus for deflecting light is used as beam deflection means for deflecting the light beamed from a picture element which organizes the pictures of the picture display means.