Invention Grant
- Patent Title: Method of fabricating semiconductor optical device
- Patent Title (中): 制造半导体光学器件的方法
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Application No.: US11293615Application Date: 2005-12-02
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Publication No.: US07378292B2Publication Date: 2008-05-27
- Inventor: Moon Ho Park , Sahng Gi Park , Su Hwan Oh , Yong Soon Baek , Kwang Ryong Oh , Gyung Ock Kim , Sung Bock Kim
- Applicant: Moon Ho Park , Sahng Gi Park , Su Hwan Oh , Yong Soon Baek , Kwang Ryong Oh , Gyung Ock Kim , Sung Bock Kim
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Ladas & Parry LLP
- Priority: KR10-2004-0103665 20041209
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Provided is a method of fabricating a semiconductor optical device for use in a subscriber or a wavelength division multiplexing (WDM) optical communication system, in which a laser diode (LD) and a semiconductor optical amplifier (SOA) are integrated in a single active layer. The laser diode (LD) and the semiconductor optical amplifier (SOA) are optically connected to each other, and electrically insulated from each other by ion injection, whereby light generated from the LD is amplified by the SOA to provide low oscillation start current and high intensity of output light when current is individually injected through each electrode.
Public/Granted literature
- US20060189016A1 Method of fabricating semiconductor optical device Public/Granted day:2006-08-24
Information query
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