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    Reflective semiconductor optical amplifier (R-SOA) and superluminescent diode (SLD)
    3.
    发明申请
    Reflective semiconductor optical amplifier (R-SOA) and superluminescent diode (SLD) 有权
    反射半导体光放大器（R-SOA）和超发光二极管（SLD）

    公开(公告)号：US20110150406A1

    公开(公告)日：2011-06-23

    申请号：US12929970

    申请日：2011-02-28

    Applicant: Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

    Inventor： Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

    IPC: G02B6/10

    CPC classification number: G02B6/1228 ,  G02B2006/121 ,  H01L33/0045 ,  H01S5/026 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/227 ,  H01S5/50

    Abstract: Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

    Abstract translation: 提供了反射半导体光放大器（R-SOA）和超发光二极管（SLD）。 R-SOA包括：基板; 包括下包层，独立于光的偏振的有源层和顺序地堆叠在基板上的上包层的光波导，所述光波导包括线性，弯曲和锥形的波导区域; 以及形成在所述光波导周围的电流阻挡层，以阻挡所述有源层中的电流流动，其中所述线性和弯曲波导区域具有单个埋入异质（BH）结构，并且所述锥形波导区域具有双BH结构。

    Method and apparatus for modulating particular light source used for laser display
    4.
    发明授权
    Method and apparatus for modulating particular light source used for laser display 有权
    用于调制用于激光显示的特定光源的方法和装置

    公开(公告)号：US07810952B2

    公开(公告)日：2010-10-12

    申请号：US11930727

    申请日：2007-10-31

    Applicant: Su Hwan Oh ,  Jong Moo Lee

    Inventor： Su Hwan Oh ,  Jong Moo Lee

    IPC: G02B26/08 ,  G02F1/35 ,  H01S3/10 ,  F21S8/10

    CPC classification number: H04N9/3129

    Abstract: A method and apparatus for modulating a particular light source used for laser display are provided. The apparatus includes a digital modulator digitally modulating light output from a semiconductor laser to a frequency higher than a repetition frequency required for laser image display; and a pixel brightness adjustor inserting at least one high-speed pulse into a period of the modulated output light, which is required for a single pixel, and adjusting a brightness of the pixel by adjusting the number of the inserted high-speed pulses.

    Abstract translation: 提供了用于调制用于激光显示的特定光源的方法和装置。 该装置包括将从半导体激光器输出的光数字调制到高于激光图像显示所需的重复频率的数字调制器; 以及像素亮度调整器，其将至少一个高速脉冲插入到单个像素所需的调制输出光的周期中，并且通过调整插入的高速脉冲的数量来调整像素的亮度。

    Buried ridge waveguide laser diode
    5.
    发明授权
    Buried ridge waveguide laser diode 有权
    埋脊波导激光二极管

    公开(公告)号：US07551658B2

    公开(公告)日：2009-06-23

    申请号：US11633739

    申请日：2006-12-05

    Applicant: Su Hwan Oh ,  Ki soo Kim ,  Oh Kee Kwon ,  Yong soon Baek

    Inventor： Su Hwan Oh ,  Ki soo Kim ,  Oh Kee Kwon ,  Yong soon Baek

    IPC: H01S5/00

    CPC classification number: H01S5/2231 ,  B82Y20/00 ,  H01S5/1039 ,  H01S5/2222 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/34306

    Abstract: Provided is a buried ridge waveguide laser diode that has improved temperature characteristics and can reduce optical loss by a leakage current. The buried ridge waveguide laser diode includes: a ridge region that extends vertically with a constant width and is composed of a selective etching layer and a first compound layer formed of a first conductive type material on a portion of the clad layer; and a p-n-p current blocking layer that has a thickness identical to the depth of the ridge region on the clad layer outside the ridge region and includes a second compound layer formed of a second conductive type material opposite to the first conductive type material. At this time, the current blocking layer includes the first compound layer extending on the second compound layer.

    Abstract translation: 提供了具有改善的温度特性并且可以通过漏电流来减少光学损耗的埋脊式波导激光二极管。 掩埋脊波导激光二极管包括：以恒定宽度垂直延伸的脊区域，并且由包层的一部分上的选择性蚀刻层和由第一导电型材料形成的第一复合层构成; 以及p-n-p电流阻挡层，其厚度与脊区域外的包覆层上的脊区域的深度相同，并且包括由与第一导电类型材料相对的第二导电类型材料形成的第二化合物层。 此时，电流阻挡层包括在第二化合物层上延伸的第一化合物层。

    REFLECTIVE SEMICONDUCTOR OPTICAL AMPLIFIER (R-SOA) AND SUPERLUMINESCENT DIODE (SLD)
    6.
    发明申请
    REFLECTIVE SEMICONDUCTOR OPTICAL AMPLIFIER (R-SOA) AND SUPERLUMINESCENT DIODE (SLD) 有权
    反射半导体光放大器（R-SOA）和超光二极管（SLD）

    公开(公告)号：US20080137180A1

    公开(公告)日：2008-06-12

    申请号：US11924772

    申请日：2007-10-26

    Applicant: Su Hwan OH ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

    Inventor： Su Hwan OH ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

    IPC: H01S3/00 ,  G02B6/10 ,  H01L33/00

    CPC classification number: G02B6/1228 ,  G02B2006/121 ,  H01L33/0045 ,  H01S5/026 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/227 ,  H01S5/50

    Abstract: Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

    Abstract translation: 提供了反射半导体光放大器（R-SOA）和超发光二极管（SLD）。 R-SOA包括：基板; 包括下包层，独立于光的偏振的有源层和顺序地堆叠在基板上的上包层的光波导，所述光波导包括线性，弯曲和锥形的波导区域; 以及形成在所述光波导周围的电流阻挡层，以阻挡所述有源层中的电流流动，其中所述线性和弯曲波导区域具有单个埋入异质（BH）结构，并且所述锥形波导区域具有双BH结构。

    Method of fabricating semiconductor optical device
    7.
    发明申请
    Method of fabricating semiconductor optical device 有权
    制造半导体光学器件的方法

    公开(公告)号：US20060189016A1

    公开(公告)日：2006-08-24

    申请号：US11293615

    申请日：2005-12-02

    Applicant: Moon Park ,  Sahng Gi Park ,  Su Hwan Oh ,  Yong Soon Baek ,  Kwang Ryong Oh ,  Gyung Ock Kim ,  Sung Bock Kim

    Inventor： Moon Park ,  Sahng Gi Park ,  Su Hwan Oh ,  Yong Soon Baek ,  Kwang Ryong Oh ,  Gyung Ock Kim ,  Sung Bock Kim

    IPC: H01L21/00

    CPC classification number: H01S5/026 ,  H01S5/0425 ,  H01S5/12 ,  H01S5/2063 ,  H01S5/2275 ,  H01S5/3201 ,  H01S5/50 ,  H01S2302/00

    Abstract: Provided is a method of fabricating a semiconductor optical device for use in a subscriber or a wavelength division multiplexing (WDM) optical communication system, in which a laser diode (LD) and a semiconductor optical amplifier (SOA) are integrated in a single active layer. The laser diode (LD) and the semiconductor optical amplifier (SOA) are optically connected to each other, and electrically insulated from each other by ion injection, whereby light generated from the LD is amplified by the SOA to provide low oscillation start current and high intensity of output light when current is individually injected through each electrode.

    Abstract translation: 提供一种制造用于用户或波分复用（WDM）光通信系统的半导体光学器件的方法，其中激光二极管（LD）和半导体光放大器（SOA）集成在单个有源层中 。 激光二极管（LD）和半导体光放大器（SOA）彼此光学连接，并通过离子注入彼此电绝缘，由LD产生的光被SOA放大，以提供低振荡起始电流和高 当通过每个电极单独注入电流时输出光的强度。

    Reflective semiconductor optical amplifier (R-SOA) with dual buried heterostructure
    9.
    发明授权
    Reflective semiconductor optical amplifier (R-SOA) with dual buried heterostructure 有权
    具有双掩埋异质结构的反射半导体光放大器（R-SOA）

    公开(公告)号：US07920322B2

    公开(公告)日：2011-04-05

    申请号：US11924772

    申请日：2007-10-26

    Applicant: Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

    Inventor： Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

    IPC: H01S5/00 ,  H01L29/06 ,  H01L33/20

    CPC classification number: G02B6/1228 ,  G02B2006/121 ,  H01L33/0045 ,  H01S5/026 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/227 ,  H01S5/50

    Abstract: Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

    Abstract translation: 提供了反射半导体光放大器（R-SOA）和超发光二极管（SLD）。 R-SOA包括：基板; 包括下包层，独立于光的偏振的有源层和顺序地堆叠在基板上的上包层的光波导，所述光波导包括线性，弯曲和锥形的波导区域; 以及形成在所述光波导周围的电流阻挡层，以阻挡所述有源层中的电流流动，其中所述线性和弯曲波导区域具有单个埋入异质（BH）结构，并且所述锥形波导区域具有双BH结构。

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