公开(公告)号：US07599403B2

公开(公告)日：2009-10-06

申请号：US11635195

申请日：2006-12-07

Applicant: Moon Ho Park ,  Yong Soon Baek ,  Kwang Ryong Oh

Inventor： Moon Ho Park ,  Yong Soon Baek ,  Kwang Ryong Oh

IPC: H01S3/00 ,  H01S5/00

CPC classification number: H01S5/0265 ,  B82Y20/00 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/101 ,  H01S5/2063 ,  H01S5/2201 ,  H01S5/2224 ,  H01S5/2275 ,  H01S5/3406 ,  H01S5/34306 ,  H01S5/4006

Abstract: A 1.55 μm SLD having a laser diode (LD) region and a semiconductor optical amplifier (SOA) region, and a method of fabricating the same, are disclosed. The SLD includes: an InP substrate having a LD region and a SOA region for amplifying light emitted from the LD region; an optical waveguide having a BRS (buried ridge strip) structure having an active layer of resonant strip pattern formed on the InP substrate and extending from the SOA region to the LD region; a first electrode formed on the active layer in the SOA region, a second electrode formed on the active layer in the LD region and electrically isolated from the first electrode; and a current blocking region interposed between the first electrode and the second electrode in order to electrically isolate the first electrode and the second electrode from each other.

Abstract translation: 公开了具有激光二极管（LD）区域和半导体光放大器（SOA）区域的1.55μmSLD及其制造方法。 SLD包括：具有LD区域的InP衬底和用于放大从LD区域发射的光的SOA区域; 具有BRS（埋脊条）结构的光波导，其具有形成在InP衬底上并从SOA区延伸到LD区的谐振带图案的有源层; 形成在SOA区域中的有源层上的第一电极，形成在LD区域中的有源层上并与第一电极电隔离的第二电极; 以及插入在第一电极和第二电极之间的电流阻挡区域，以将第一电极和第二电极彼此电隔离。

公开(公告)号：US07378292B2

公开(公告)日：2008-05-27

申请号：US11293615

申请日：2005-12-02

Applicant: Moon Ho Park ,  Sahng Gi Park ,  Su Hwan Oh ,  Yong Soon Baek ,  Kwang Ryong Oh ,  Gyung Ock Kim ,  Sung Bock Kim

Inventor： Moon Ho Park ,  Sahng Gi Park ,  Su Hwan Oh ,  Yong Soon Baek ,  Kwang Ryong Oh ,  Gyung Ock Kim ,  Sung Bock Kim

IPC: H01L21/00

CPC classification number: H01S5/026 ,  H01S5/0425 ,  H01S5/12 ,  H01S5/2063 ,  H01S5/2275 ,  H01S5/3201 ,  H01S5/50 ,  H01S2302/00

Abstract: Provided is a method of fabricating a semiconductor optical device for use in a subscriber or a wavelength division multiplexing (WDM) optical communication system, in which a laser diode (LD) and a semiconductor optical amplifier (SOA) are integrated in a single active layer. The laser diode (LD) and the semiconductor optical amplifier (SOA) are optically connected to each other, and electrically insulated from each other by ion injection, whereby light generated from the LD is amplified by the SOA to provide low oscillation start current and high intensity of output light when current is individually injected through each electrode.

Abstract translation: 提供一种制造用于用户或波分复用（WDM）光通信系统的半导体光学器件的方法，其中激光二极管（LD）和半导体光放大器（SOA）集成在单个有源层中 。 激光二极管（LD）和半导体光放大器（SOA）彼此光学连接，并通过离子注入彼此电绝缘，由LD产生的光被SOA放大，以提供低振荡起始电流和高 当通过每个电极单独注入电流时输出光的强度。

公开(公告)号：US20080019638A1

公开(公告)日：2008-01-24

申请号：US11768470

申请日：2007-06-26

Applicant: Oh Kee KWON ,  Jonghoi KIM ,  Kwang Ryong OH

Inventor： Oh Kee KWON ,  Jonghoi KIM ,  Kwang Ryong OH

IPC: G02B6/34

CPC classification number: H01S5/50 ,  G02B6/12007 ,  G02B6/12019 ,  G02B6/29326 ,  G02B6/29328 ,  H01S5/005 ,  H01S5/0268 ,  H01S5/0654 ,  H01S5/1003 ,  H01S5/1071 ,  H01S5/4087 ,  H01S5/5045

Abstract: Provided is a long cavity single-mode laser diode in which a ring waveguide is integrated such as a conventional array waveguide (AWG)-based laser or a concave grating (CG)-based laser.

Abstract translation: 提供了一种其中集成环形波导的长腔单模激光二极管，例如基于传统阵列波导（AWG）的激光器或基于凹面光栅（CG）的激光器。

公开(公告)号：US07248415B2

公开(公告)日：2007-07-24

申请号：US11237043

申请日：2005-09-28

Applicant: Oh Kee Kwon ,  Kang Ho Kim ,  Hyun Soo Kim ,  Jong Hoi Kim ,  Kwang Ryong Oh

Inventor： Oh Kee Kwon ,  Kang Ho Kim ,  Hyun Soo Kim ,  Jong Hoi Kim ,  Kwang Ryong Oh

IPC: G02B3/00 ,  G02B5/04 ,  G02F1/295

CPC classification number: G02B27/095 ,  G02B19/0009 ,  G02B19/0052 ,  G02B26/0875 ,  G02B27/0977 ,  G02B2006/12078 ,  G02B2006/12104 ,  G02B2006/12145 ,  G02F1/295

Abstract: Provided is an optical deflector for deflecting radiation beams. The optical deflector includes: a peripheral region having a first effective refractive index; and a deflection pattern region having a predetermined shape and a second effective refractive index, wherein the second effective refractive index differs from the first effective refractive index. Here, due to the deflection pattern region having the predetermined shape, the radiation beams are deflected in a direction starting from a certain point. By using the optical deflector, the locus of a light source can be designed in one of various forms, such as a straight line, a circle, an ellipse, or a parabola.

Abstract translation: 提供了用于偏转辐射束的光学偏转器。 光学偏转器包括：具有第一有效折射率的周边区域; 以及具有预定形状和第二有效折射率的偏转图案区域，其中所述第二有效折射率与所述第一有效折射率不同。 这里，由于具有预定形状的偏转图案区域，辐射束在从某一点开始的方向上偏转。 通过使用光学偏转器，光源的轨迹可以被设计成各种形式之一，例如直线，圆形，椭圆形或抛物线。

公开(公告)号：US07133194B1

公开(公告)日：2006-11-07

申请号：US11388522

申请日：2006-03-24

Applicant: Oh Kee Kwon ,  Kang Ho Kim ,  Kwang Ryong Oh ,  Jong Hoi Kim ,  Eun Deok Sim ,  Hyun Soo Kim

Inventor： Oh Kee Kwon ,  Kang Ho Kim ,  Kwang Ryong Oh ,  Jong Hoi Kim ,  Eun Deok Sim ,  Hyun Soo Kim

IPC: H01S3/13

CPC classification number: H01S5/4062 ,  H01S5/026 ,  H01S5/0268 ,  H01S5/06243 ,  H01S5/141 ,  H01S5/4075

Abstract: Provided is a wavelength tunable light source that can electrically tune wavelengths by monolithically integrating an optical amplifier, a beam steering unit, and a concave diffraction grating on a single substrate. A beam is deflected by the beam steering unit when an electrical signal is applied to two electrodes installed in the beam steering unit to be incident on the diffraction grating, and then diffracted by the diffraction grating according to the incidence angle such that part of the beam with a specific wavelength is reflected, thereby achieving wavelength tuning. Since the wavelength tuning is achieved electrically, the wavelength tunable light source is structurally stable and has a rapid wavelength tuning rate.

Abstract translation: 提供了一种波长可调光源，其可以通过在单个基板上单片集成光放大器，光束转向单元和凹衍射光栅来电调谐波长。 当电信号被施加到安装在光束转向单元中的两个电极入射到衍射光栅上时，光束被光束转向单元偏转，然后根据入射角被衍射光栅衍射，使得光束的一部分 反射特定波长，从而实现波长调谐。 由于波长调谐是电气实现的，波长可调光源在结构上是稳定的并且具有快速的波长调谐率。

公开(公告)号：US5581108A

公开(公告)日：1996-12-03

申请号：US301998

申请日：1994-09-07

Applicant: Hong-Man Kim ,  Kwang-Ryong Oh ,  Ki-Sung Park ,  Chong-Dae Park

Inventor： Hong-Man Kim ,  Kwang-Ryong Oh ,  Ki-Sung Park ,  Chong-Dae Park

IPC: G02F1/015 ,  G02F1/313 ,  H01L31/00 ,  G02B6/26

CPC classification number: G02F1/3138 ,  G02F2001/0152 ,  G02F2202/102

Abstract: Disclosed is an optical switch device for totally reflecting an incident light therein in accordance with a change in refractive index occurring owing to current application, which is manufactured by the steps of: sequentially forming an optical waveguide layer, an n-InP clad layer and an n-InGaAs cap layer on a main surface of an n-InP substrate using an epitaxial growing; selectively etching the n-InGaAs cap layer to form an opening tapered downward; diffusing an impurity into the n-InP clad layer through the opening and into the n-InGaAs cap layer to a predetermined depth from a surface thereof so as to form a first impurity diffused region in the n-InP clad layer under the opening and to form a second impurity diffused region along the surface of the n-InGaAs cap layer; etching the layers on the optical waveguide layer using a mask to form a ridge-shaped waveguide; and forming electrodes on the n-InGaAs cap layer and an exposed surface of the n-InP clad layer and on a surface which is opposite to the main surface of the n-InP substrate. Also, before forming the n-InGaAs cap layer, a p-InP current blocking layer is formed between the n-InP clad layer and the n-InGaAs cap layer so as to prevent a current from being dispersed other portions excluding the impurity diffused portion.

Abstract translation: 公开了一种用于根据由于电流施加而发生的折射率的变化而全部反射入射光的光学开关装置，其通过以下步骤制造：顺序地形成光波导层，n-InP覆盖层和 使用外延生长在n-InP衬底的主表面上的n-InGaAs覆盖层; 选择性地蚀刻n-InGaAs覆盖层以形成向下锥形的开口; 通过开口将杂质扩散到n-InP包层中并从其表面扩散到n-InGaAs覆盖层至预定深度，以便在开口下方的n-InP包层中形成第一杂质扩散区域，并且 沿着n-InGaAs覆盖层的表面形成第二杂质扩散区域; 使用掩模蚀刻光波导层上的层以形成脊形波导; 以及在n-InGaAs覆盖层上形成电极以及n-InP覆盖层的暴露表面和与n-InP衬底的主表面相对的表面上形成电极。 此外，在形成n-InGaAs覆盖层之前，在n-InP覆盖层和n-InGaAs覆盖层之间形成p-InP电流阻挡层，以防止电流分散除杂质扩散部分之外的其它部分 。

公开(公告)号：US07599624B2

公开(公告)日：2009-10-06

申请号：US11252401

申请日：2005-10-17

Applicant: Sahng Gi Park ,  Su Hwan Oh ,  Kwang Seong Choi ,  Moon Ho Park ,  Yong Soon Baek ,  Kwang Ryong Oh

Inventor： Sahng Gi Park ,  Su Hwan Oh ,  Kwang Seong Choi ,  Moon Ho Park ,  Yong Soon Baek ,  Kwang Ryong Oh

IPC: H04J14/00

CPC classification number: H04J14/0282 ,  H04J14/0226 ,  H04J14/0246 ,  H04J14/0247 ,  H04J14/025 ,  H04J14/0252 ,  H04J2014/0253

Abstract: A channel switching function is added to a wavelength division multiplexing passive optical network (WDM-PON) system, which is an access optical network system, and the potential transmission rate is increased by combining wide wavelength tunable lasers and a time division multiplexing (TDM) data structure and properly using the necessary optical components. In addition, when the wavelength of a light source or an arrayed waveguide grating (AWG) changes, the wavelength is traced and the magnitude of a transmitted signal is maximized without an additional detour line using a loop-back network structure. Furthermore, fewer thermo-electric controllers (TECs) are required for stabilizing the temperature of an optical line terminal (OLT) using wavelength tunable lasers, each laser electrically changing its wavelength.

Abstract translation: 信道切换功能被添加到作为接入光网络系统的波分复用无源光网络（WDM-PON）系统，并且通过组合宽波长可调激光器和时分复用（TDM）来增加潜在传输速率， 数据结构，并正确使用必要的光学元件。 此外，当光源或阵列波导光栅（AWG）的波长改变时，跟踪波长，并且使用环回网络结构，没有额外的绕行线，传输信号的幅度最大化。 此外，需要较少的热电控制器（TEC）来稳定使用波长可调激光器的光线路终端（OLT）的温度，每个激光电子改变其波长。

公开(公告)号：US20090154505A1

公开(公告)日：2009-06-18

申请号：US12181734

申请日：2008-07-29

Applicant: Kwang Ryong OH ,  Jong Hoi Kim ,  Dong Churl Kim ,  Oh Kee Kwon ,  Ki Soo Kim ,  Ki Hong Yoon

Inventor： Kwang Ryong OH ,  Jong Hoi Kim ,  Dong Churl Kim ,  Oh Kee Kwon ,  Ki Soo Kim ,  Ki Hong Yoon

IPC: H01S3/10

CPC classification number: H01S5/1071 ,  G02B6/12007 ,  H01S5/026 ,  H01S5/1032 ,  H01S5/50

Abstract: A wavelength tunable laser diode using a double coupled ring resonator is provided. A new double coupled ring resonator structure is formed by a connection of two ring resonators having different radii so that stable laser oscillation occurs only in a resonant wavelength at which the two ring resonators are simultaneously resonated, and the effective refractive index of the two ring resonators is properly controlled differently for tunable laser oscillation wavelengths. The reproducibility of the optical coupling characteristics of the passive waveguides and the ring resonator can be assured by multi-mode couplers. This results in improved manufacturing productivity of the wavelength tunable laser diode. It is possible to amplify and output an output light without having an effect on oscillation wavelength characteristic by means of an optical amplifier integrated in an output end.

Abstract translation: 提供了使用双耦合环形谐振器的波长可调激光二极管。 通过具有不同半径的两个环形谐振器的连接形成新的双重耦合环形谐振器结构，使得仅在两个环形谐振器同时谐振的谐振波长下发生稳定的激光振荡，并且两个环形谐振器的有效折射率 对于可调谐的激光振荡波长来说，它们被适当地控制不同。 通过多模耦合器可以确保无源波导和环形谐振器的光耦合特性的重现性。 这导致波长可调激光二极管的制造生产率提高。 可以通过集成在输出端的光放大器对放大和输出输出光而不影响振荡波长特性。

公开(公告)号：US07212560B2

公开(公告)日：2007-05-01

申请号：US11029784

申请日：2004-12-21

Applicant: Kwang Ryong Oh ,  Oh Kee Kwon ,  Kang Ho Kim ,  Jong Hoi Kim ,  Hyun Soo Kim

Inventor： Kwang Ryong Oh ,  Oh Kee Kwon ,  Kang Ho Kim ,  Jong Hoi Kim ,  Hyun Soo Kim

IPC: H01S3/08 ,  H01S3/10

CPC classification number: H01S5/141 ,  G02B6/29308 ,  G02B6/2931 ,  G02B6/29313 ,  H01S5/005 ,  H01S5/026 ,  H01S5/101 ,  H01S5/143

Abstract: Provided is a tunable external cavity laser diode using a variable optical deflector wherein the variable optical deflector, in which a refractive index varies according to an electrical signal, is arranged in a triangular shape between a concave diffraction grating and a reflective mirror. Since a resonant frequency is changed using the electrical signal rather than the mechanical movement, the stable operation and continuous high-speed tenability may be enabled. In addition, when the tunable external cavity laser diode according to the present invention is implemented in an InP/InGaAsP/InP slab waveguide, a variable time determined by the carrier lifetime may be reduced to several nanoseconds or less, the miniaturization is enabled, and the manufacturing costs are significantly reduced due to the process simplification. Moreover, when the concave diffraction grating is designed based on a silica (or polymer) based slab waveguide, the fabrication may be performed even by a lithography process having low resolution, thereby enhancing reproducibility and uniformity of the diffraction grating, and accordingly reducing the manufacturing costs.

Abstract translation: 提供了一种可调谐的外腔激光二极管，其使用可变光学偏转器，其中折射率根据电信号变化的可变光学偏转器在凹面衍射光栅和反射镜之间布置成三角形。 由于使用电信号而不是机械运动来改变谐振频率，因此可以实现稳定的运行和连续的高速可靠性。 此外，当根据本发明的可调谐外腔激光二极管在InP / InGaAsP / InP平板波导中实现时，由载流子寿命确定的可变时间可以减少到几纳秒或更小，可实现小型化，并且 由于过程简化，制造成本显着降低。 此外，当基于基于二氧化硅（或聚合物）的平板波导设计凹面衍射光栅时，即使通过具有低分辨率的光刻工艺也可以进行制造，从而提高衍射光栅的再现性和均匀性，并因此降低制造 费用

公开(公告)号：US06980345B2

公开(公告)日：2005-12-27

申请号：US10672220

申请日：2003-09-26

Applicant: Hyun-Soo Kim ,  Jong-Hoi Kim ,  Eun-Deok Sim ,  Kang-Ho Kim ,  Oh-Kee Kwon ,  Kwang-Ryong Oh

Inventor： Hyun-Soo Kim ,  Jong-Hoi Kim ,  Eun-Deok Sim ,  Kang-Ho Kim ,  Oh-Kee Kwon ,  Kwang-Ryong Oh

IPC: H01S5/34 ,  G02F1/03 ,  G02F1/07 ,  H01S3/13 ,  H01S5/50

CPC classification number: H01S5/50 ,  H01S5/5072

Abstract: Disclosed is a high speed optical signal processor which includes a saturable absorber area including a substrate, an active layer, a clad layer and a first upper electrode which are sequentially formed on one face of the substrate, and a first lower electrode formed on the other face of the substrate; and a gain-clamped optical amplifier area including a substrate having a diffraction grating for generating a laser beam, an active layer, a clad layer and a second upper electrode which are sequentially formed on one face of the substrate, and a second lower electrode formed on the other face of the substrate, the second upper electrode being isolated from the first upper electrode of the saturable absorber area.

Abstract translation: 公开了一种高速光信号处理器，其包括可饱和吸收体区域，其包括依次形成在基板的一个面上的基板，有源层，覆盖层和第一上电极以及形成在另一面上的第一下电极 基材面; 以及增益钳位的光放大器区域，包括具有用于产生激光束的衍射光栅的衬底，有源层，覆盖层和第二上电极，所述激光束被顺序地形成在衬底的一个面上，第二下电极形成 在基板的另一面上，第二上部电极与可饱和吸收体区域的第一上部电极隔离。