Invention Grant
- Patent Title: Magnetic tunnel junction and memory device including the same
- Patent Title (中): 磁隧道结和包括其的存储器件
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Application No.: US10851387Application Date: 2004-05-24
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Publication No.: US07378698B2Publication Date: 2008-05-27
- Inventor: Young-Ki Ha , Jang-Eun Lee , Hyun-Jo Kim , Jun-Soo Bae , In-Gyu Baek , Se-Chung Oh
- Applicant: Young-Ki Ha , Jang-Eun Lee , Hyun-Jo Kim , Jun-Soo Bae , In-Gyu Baek , Se-Chung Oh
- Applicant Address: KR Suwon, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2003-0055895 20030812
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
Abstract:
A magnetic tunnel junction device includes a magnetically programmable free magnetic layer. The free magnetic layer includes a lamination of at least two ferromagnetic layers and at least one intermediate layer interposed between the at least two ferromagnetic layers.
Public/Granted literature
- US20050035383A1 Magnetic tunnel junction and memory device including the same Public/Granted day:2005-02-17
Information query
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