- 专利标题： Transistor having a protruded drain
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申请号： US11705354申请日： 2007-02-12
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公开(公告)号： US07378708B2公开(公告)日： 2008-05-27
- 发明人: Tae-Jung Lee , Soo-Cheol Lee , Dong-Ryul Chang
- 申请人： Tae-Jung Lee , Soo-Cheol Lee , Dong-Ryul Chang
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Mills & Onello LLP
- 优先权： KR03-67244 20030929
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要：
A field effect transistor includes a gate that is formed in a channel region of an active region defined on a substrate. A source is formed at a first surface portion of the active region that is adjacently disposed at a first side face of the gate. A drain is formed at a second surface portion of the active region that is opposite to the first surface portion with respect to the gate. The drain has a protruded portion that is protruded from a surface portion of the substrate.
公开/授权文献
- US20070145477A1 Transistor having a protruded drain 公开/授权日：2007-06-28
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