Method for making a semiconductor device with a high-k gate dielectric and a metal gate electrode

Invention Grant

US07381608B2 Method for making a semiconductor device with a high-k gate dielectric and a metal gate electrode 有权

Title translation: 制造具有高k栅极电介质和金属栅电极的半导体器件的方法

Please log in to see more content

Patent Title: Method for making a semiconductor device with a high-k gate dielectric and a metal gate electrode
Patent Title (中): 制造具有高k栅极电介质和金属栅电极的半导体器件的方法
Application No.: US11006218

Application Date: 2004-12-07
Publication No.: US07381608B2

Publication Date: 2008-06-03
Inventor: Justin K. Brask , Sangwoo Pae , Jack Kavalieros , Matthew V. Metz , Mark L. Doczy , Suman Datta , Robert S. Chau , Jose A. Maiz
Applicant: Justin K. Brask , Sangwoo Pae , Jack Kavalieros , Matthew V. Metz , Mark L. Doczy , Suman Datta , Robert S. Chau , Jose A. Maiz
Applicant Address: US CA Santa Clara
Assignee: Intel Corporation
Current Assignee: Intel Corporation
Current Assignee Address: US CA Santa Clara
Main IPC: H01L21/8238
IPC: H01L21/8238

Method for making a semiconductor device with a high-k gate dielectric and a metal gate electrode

Abstract:

A method for making a semiconductor device is described. That method comprises adding nitrogen to a silicon dioxide layer to form a nitrided silicon dioxide layer on a substrate. After forming a sacrificial layer on the nitrided silicon dioxide layer, the sacrificial layer is removed to generate a trench. A high-k gate dielectric layer is formed on the nitrided silicon dioxide layer within the trench, and a metal gate electrode is formed on the high-k gate dielectric layer.

Abstract(Chinese):

描述制造半导体器件的方法。该方法包括向二氧化硅层中加入氮以在基底上形成氮化二氧化硅层。在氮化二氧化硅层上形成牺牲层之后，除去牺牲层以产生沟槽。在沟槽内的氮化二氧化硅层上形成高k栅介质层，在高k栅介质层上形成金属栅电极。

Public/Granted literature

US20060121678A1 Method for making a semiconductor device with a high-k gate dielectric and a metal gate electrode Public/Granted day:2006-06-08

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS