发明授权
- 专利标题： Oxygen elimination for device processing
- 专利标题（中）： 设备处理消除氧气
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申请号： US11371023申请日： 2006-03-09
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公开(公告)号： US07381620B1公开(公告)日： 2008-06-03
- 发明人: Boon-Yong Ang , Hidehiko Shiraiwa , Simon S. Chan , Harpreet K. Sachar , Mark Randolph
- 申请人： Boon-Yong Ang , Hidehiko Shiraiwa , Simon S. Chan , Harpreet K. Sachar , Mark Randolph
- 申请人地址： US CA Sunnyvale
- 专利权人： Spansion LLC
- 当前专利权人： Spansion LLC
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Harrity Snyder LLP
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method includes forming at least a portion of a semiconductor device in a processing chamber containing oxygen and removing substantially all of the oxygen from the processing chamber. The method further includes forming remaining portions of the semiconductor device in the processing chamber without the presence of oxygen.
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