Invention Grant
US07381624B2 Technique for forming a substrate having crystalline semiconductor regions of different characteristics located above a crystalline bulk substrate
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用于形成具有位于结晶体基板上方的具有不同特性的晶体半导体区域的衬底的技术
- Patent Title: Technique for forming a substrate having crystalline semiconductor regions of different characteristics located above a crystalline bulk substrate
- Patent Title (中): 用于形成具有位于结晶体基板上方的具有不同特性的晶体半导体区域的衬底的技术
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Application No.: US11177214Application Date: 2005-07-08
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Publication No.: US07381624B2Publication Date: 2008-06-03
- Inventor: Andy Wei , Thorsten Kammler , Michael Raab , Manfred Horstmann
- Applicant: Andy Wei , Thorsten Kammler , Michael Raab , Manfred Horstmann
- Applicant Address: US TX Austin
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austin
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE102004057764 20041130
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
By direct bonding of two crystalline semiconductor layers of different crystallographic orientation and/or material composition and/or internal strain, bulk-like hybrid substrates may be formed, thereby providing the potential for forming semiconductor devices in accordance with a single transistor architecture on the hybrid substrate.
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