发明授权
- 专利标题： Magnetoresistive effect element and magnetic memory device
- 专利标题（中）： 磁阻效应元件和磁存储器件
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申请号： US11338889申请日： 2006-01-25
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公开(公告)号： US07382643B2公开(公告)日： 2008-06-03
- 发明人: Hiroshi Ashida , Masashige Sato , Shinjiro Umehara , Kazuo Kobayashi
- 申请人： Hiroshi Ashida , Masashige Sato , Shinjiro Umehara , Kazuo Kobayashi
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP.
- 优先权： JP2005-269896 20050916
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
The magnetoresistive effect element comprises a pinned magnetic layer 16 having a multilayered synthetic antiferromagnet (SAF) structure, a nonmagnetic spacer layer 18 formed on the pinned magnetic layer 16, a free magnetic layer 20 formed on the nonmagnetic spacer layer 18 and formed of a single ferromagnetic layer, a nonmagnetic spacer layer 22 formed on the free magnetic layer 20, and a pinned magnetic layer 24 of a multilayered SAF structure formed on the nonmagnetic spacer layer 22, wherein a magnetization direction of the ferromagnetic layer 16c of the pinned magnetic layer 16, which is nearest the free magnetic layer 20, and a magnetization direction of the ferromagnetic layer 24a of the pinned magnetic layer 24, which is nearest the free magnetic layer 20, are opposite to each other.
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