Invention Grant
US07382660B2 Method for accessing a multilevel nonvolatile memory device of the flash NAND type
有权
用于访问闪存NAND型的多级非易失性存储器件的方法
- Patent Title: Method for accessing a multilevel nonvolatile memory device of the flash NAND type
- Patent Title (中): 用于访问闪存NAND型的多级非易失性存储器件的方法
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Application No.: US11458904Application Date: 2006-07-20
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Publication No.: US07382660B2Publication Date: 2008-06-03
- Inventor: Angelo Bovino , Vincenzo Altieri , Roberto Ravasio , Rino Micheloni , Mario De Matteis
- Applicant: Angelo Bovino , Vincenzo Altieri , Roberto Ravasio , Rino Micheloni , Mario De Matteis
- Applicant Address: IT Agrate Brianza KR Kyoungki-Do
- Assignee: STMicroelectronics S.R.L.,Hynix Semiconductor Inc.
- Current Assignee: STMicroelectronics S.R.L.,Hynix Semiconductor Inc.
- Current Assignee Address: IT Agrate Brianza KR Kyoungki-Do
- Agency: Seed IP Law Group PLLC
- Agent Lisa K. Jorgenson; Robert Iannucci
- Priority: EP05106783 20050722
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
Multi-level programming allows for writing a first and a second bit in selected cells by separately programming the first bit from the second bit. Programming of the first bit determines a shifting from a first threshold level to a second threshold level. Programming of the second bit requires a preliminary reading to detect whether the first bit has been modified, performing a first writing step to bring the cell to a third threshold voltage if the first bit has been modified and performing a second writing step to bring the selected cell to a fourth threshold voltage different from the third threshold level if the first bit has not been modified. For increasing reading and program reliability, during preliminary reading of the second portion a reading result is forced to correspond to the first threshold level.
Public/Granted literature
- US20070047299A1 METHOD FOR ACCESSING A MULTILEVEL NONVOLATILE MEMORY DEVICE OF THE FLASH NAND TYPE Public/Granted day:2007-03-01
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