Method for accessing a multilevel nonvolatile memory device of the flash NAND type
    1.
    发明授权
    Method for accessing a multilevel nonvolatile memory device of the flash NAND type 有权
    用于访问闪存NAND型的多级非易失性存储器件的方法

    公开(公告)号:US07382660B2

    公开(公告)日:2008-06-03

    申请号:US11458904

    申请日:2006-07-20

    CPC classification number: G11C16/0483 G11C11/5628 G11C2211/5641

    Abstract: Multi-level programming allows for writing a first and a second bit in selected cells by separately programming the first bit from the second bit. Programming of the first bit determines a shifting from a first threshold level to a second threshold level. Programming of the second bit requires a preliminary reading to detect whether the first bit has been modified, performing a first writing step to bring the cell to a third threshold voltage if the first bit has been modified and performing a second writing step to bring the selected cell to a fourth threshold voltage different from the third threshold level if the first bit has not been modified. For increasing reading and program reliability, during preliminary reading of the second portion a reading result is forced to correspond to the first threshold level.

    Abstract translation: 多级编程允许通过从第二位单独编程第一位来在选定单元中写入第一位和第二位。 第一位的编程确定从第一阈值电平转换到第二阈值电平。 第二位的编程需要初步读取以检测第一位是否已被修改,如果第一位已被修改并执行第二写入步骤,执行第一写入步骤以使单元进入第三阈值电压,以使所选择的 如果第一位未被修改,则将单元转换为不同于第三阈值电平的第四阈值电压。 为了增加读取和编程的可靠性,在第二部分的初步读取期间,读取结果被迫对应于第一阈值水平。

    METHOD FOR ACCESSING A MULTILEVEL NONVOLATILE MEMORY DEVICE OF THE FLASH NAND TYPE
    2.
    发明申请
    METHOD FOR ACCESSING A MULTILEVEL NONVOLATILE MEMORY DEVICE OF THE FLASH NAND TYPE 有权
    用于访问闪存NAND类型的多个非易失性存储器件的方法

    公开(公告)号:US20070047299A1

    公开(公告)日:2007-03-01

    申请号:US11458904

    申请日:2006-07-20

    CPC classification number: G11C16/0483 G11C11/5628 G11C2211/5641

    Abstract: Multi-level programming allows for writing a first and a second bit in selected cells by separately programming the first bit from the second bit. Programming of the first bit determines a shifting from a first threshold level to a second threshold level. Programming of the second bit requires a preliminary reading to detect whether the first bit has been modified, performing a first writing step to bring the cell to a third threshold voltage if the first bit has been modified and performing a second writing step to bring the selected cell to a fourth threshold voltage different from the third threshold level if the first bit has not been modified. For increasing reading and program reliability, during preliminary reading of the second portion a reading result is forced to correspond to the first threshold level.

    Abstract translation: 多级编程允许通过从第二位单独编程第一位来在选定单元中写入第一位和第二位。 第一位的编程确定从第一阈值电平转换到第二阈值电平。 第二位的编程需要初步读取以检测第一位是否已被修改,如果第一位已被修改并执行第二写入步骤,执行第一写入步骤以使单元进入第三阈值电压,以使所选择的 如果第一位未被修改,则将单元转换为不同于第三阈值电平的第四阈值电压。 为了增加读取和编程的可靠性,在第二部分的初步读取期间,读取结果被迫对应于第一阈值水平。

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