Invention Grant
- Patent Title: Substrate processing apparatus using neutralized beam and method thereof
- Patent Title (中): 使用中和束的基板处理装置及其方法
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Application No.: US11335725Application Date: 2006-01-19
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Publication No.: US07385183B2Publication Date: 2008-06-10
- Inventor: Sung-Chan Park , Sung-Wook Hwang
- Applicant: Sung-Chan Park , Sung-Wook Hwang
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Mills & Onello LLP
- Priority: KR10-2005-0005966 20050121
- Main IPC: H05H3/02
- IPC: H05H3/02 ; H01J37/26 ; H01S1/00

Abstract:
In a substrate processing apparatus using a neutralized beam and a method thereof, the substrate processing apparatus includes: an ion source for emitting an ion beam at an emitting angle; reflectors at which the ion beam emitted by the ion source is incident and subject to 2n collisions (where n is a positive integer) in first and second opposite directions to neutralize the ion beam as a neutralized beam and to restore a direction of propagation of the neutralized beam to the emitting angle of the ion beam; and a substrate at which the neutralized beam generated by the reflectors is incident on to perform a process. Accordingly, an incident angle of the resultant neutralized beam is perpendicular to a substrate, while the direction of propagation of the originating ion source and the surface of the substrate are maintained to be perpendicular to each other.
Public/Granted literature
- US20060163466A1 Substrate processing apparatus using neutralized beam and method thereof Public/Granted day:2006-07-27
Information query
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