发明授权
US07385202B2 Divergent charged particle implantation for improved transistor symmetry
有权
用于改善晶体管对称性的发散带电粒子注入
- 专利标题： Divergent charged particle implantation for improved transistor symmetry
- 专利标题（中）： 用于改善晶体管对称性的发散带电粒子注入
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申请号： US11006185申请日： 2004-12-07
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公开(公告)号： US07385202B2公开(公告)日： 2008-06-10
- 发明人: James D. Bernstein , Lance S. Robertson , Said Ghneim , Jiejie Xu , Jeffrey Loewecke
- 申请人： James D. Bernstein , Lance S. Robertson , Said Ghneim , Jiejie Xu , Jeffrey Loewecke
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Jacqueline J. Garner; W. James Brady, III; Frederick J. Telecky, Jr.
- 主分类号： G01N23/00
- IPC分类号： G01N23/00 ; G21K7/00
摘要：
The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles (320) to a substrate (330), the beam of charged particles (320) having a given beam divergence, and forming a diverged beam of charged particles (360) by subjecting the beam of charged particles (320) to an energy field (350), thereby causing the beam of charged particles (320) to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles (360) into the substrate (330).
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