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1.发明授权Method for implanting dopants within a substrate by tilting the substrate relative to the implant source 有权通过使衬底相对于植入源倾斜来在衬底内注入掺杂剂的方法公开(公告)号：US07232744B2
公开(公告)日：2007-06-19
申请号：US10956583
申请日：2004-10-01
IPC分类号： H01L21/265
CPC分类号： H01L21/26586 , H01J2237/31701 , H01L21/823814 , Y10S438/914
摘要： The present invention provides a method for implanting a dopant in a substrate and a method for manufacturing a semiconductor device. The method for implanting a dopant, among other steps, including tilting a substrate (310) located on or over an implant platen (305) about an axis in a first direction with respect to an implant source (320) and implanting a portion of an implant dose within the substrate (310) tilted in the first direction. The method further includes tilting the substrate (310) having already been tilted in the first direction about the axis in a second opposite direction, and implanting at least a portion of the implant dose within the substrate (310) tilted in the second opposite direction.
摘要翻译： 本发明提供了一种用于在衬底中注入掺杂剂的方法和用于制造半导体器件的方法。 用于植入掺杂剂的方法以及其它步骤包括使位于植入物台板（305）上方或上方的衬底（310）相对于植入源（320）沿着第一方向的轴线倾斜并植入一部分 在第一方向上倾斜的衬底（310）内的植入剂量。 该方法还包括使已经在第一方向上沿第一方向倾斜的衬底（310）沿着第二相反方向围绕该轴线倾斜，并且将植入剂量的至少一部分植入衬底（310）内沿第二相反方向倾斜。
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2.发明授权公开(公告)号：US07385202B2
公开(公告)日：2008-06-10
申请号：US11006185
申请日：2004-12-07
CPC分类号： H01L29/78 , H01J2237/31701 , H01L21/26513 , H01L29/66575
摘要： The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles (320) to a substrate (330), the beam of charged particles (320) having a given beam divergence, and forming a diverged beam of charged particles (360) by subjecting the beam of charged particles (320) to an energy field (350), thereby causing the beam of charged particles (320) to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles (360) into the substrate (330).
摘要翻译： 本发明提供了一种用于将带电粒子注入基板的方法和用于制造集成电路的方法。 用于将带电粒子注入衬底的方法以及其他步骤包括将带电粒子束（320）投射到衬底（330），具有给定光束发散的带电粒子束（320），并形成发散光束 的带电粒子（360）通过使带电粒子束（320）经受能量场（350），从而使带电粒子束（320）具有较大的光束发散。 该方法然后期望将发散的带电粒子束（360）植入衬底（330）中。
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3.发明授权公开(公告)号：US07807978B2
公开(公告)日：2010-10-05
申请号：US12114866
申请日：2008-05-05
CPC分类号： H01L29/78 , H01J2237/31701 , H01L21/26513 , H01L29/66575
摘要： The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles (320) to a substrate (330), the beam of charged particles (320) having a given beam divergence; and forming a diverged beam of charged particles (360) by subjecting the beam of charged particles (320) to an energy field (350), thereby causing the beam of charged particles (320) to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles (360) into the substrate (330).
摘要翻译： 本发明提供了一种用于将带电粒子注入基板的方法和用于制造集成电路的方法。 用于将带电粒子注入衬底的方法以及其他步骤包括将带电粒子束（320）投射到衬底（330），具有给定束束散度的带电粒子束（320）; 以及通过使带电粒子束（320）经受能量场（350）而形成带电粒子（360）的发散束，从而使带电粒子束（320）具有较大的光束发散。 该方法然后期望将发散的带电粒子束（360）植入衬底（330）中。
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4.发明申请公开(公告)号：US20080206971A1
公开(公告)日：2008-08-28
申请号：US12114866
申请日：2008-05-05
IPC分类号： H01L21/265
CPC分类号： H01L29/78 , H01J2237/31701 , H01L21/26513 , H01L29/66575
摘要： The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles (320) to a substrate (330), the beam of charged particles (320) having a given beam divergence; and forming a diverged beam of charged particles (360) by subjecting the beam of charged particles (320) to an energy field (350), thereby causing the beam of charged particles (320) to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles (360) into the substrate (330).
摘要翻译： 本发明提供了一种用于将带电粒子注入基板的方法和用于制造集成电路的方法。 用于将带电粒子注入衬底的方法以及其他步骤包括将带电粒子束（320）投射到衬底（330），具有给定束束散度的带电粒子束（320）; 以及通过使带电粒子束（320）经受能量场（350）而形成带电粒子（360）的发散束，从而使带电粒子束（320）具有较大的光束发散。 该方法然后期望将发散的带电粒子束（360）植入衬底（330）中。
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5.发明申请公开(公告)号：US20080142724A1
公开(公告)日：2008-06-19
申请号：US12039995
申请日：2008-02-29
IPC分类号： G21K1/08
CPC分类号： H01L21/26513 , H01J2237/31701 , H01L29/66575 , H01L29/78
摘要： The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles (320) to a substrate (330), the beam of charged particles (320) having a given beam divergence, and forming a diverged beam of charged particles (360) by subjecting the beam of charged particles (320) to an energy field (350), thereby causing the beam of charged particles (320) to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles (360) into the substrate (330).
摘要翻译： 本发明提供了一种用于将带电粒子注入基板的方法和用于制造集成电路的方法。 用于将带电粒子注入衬底的方法以及其他步骤包括将带电粒子束（320）投射到衬底（330），具有给定光束发散的带电粒子束（320），并形成发散光束 的带电粒子（360）通过使带电粒子束（320）经受能量场（350），从而使带电粒子束（320）具有较大的光束发散。 该方法然后期望将发散的带电粒子束（360）植入衬底（330）中。
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6.发明申请公开(公告)号：US20060121706A1
公开(公告)日：2006-06-08
申请号：US11006185
申请日：2004-12-07
申请人： James Bernstein , Lance Robertson , Said Ghneim , Jiejie Xu , Jeffrey Loewecke
发明人： James Bernstein , Lance Robertson , Said Ghneim , Jiejie Xu , Jeffrey Loewecke
IPC分类号： H01L21/425
CPC分类号： H01L29/78 , H01J2237/31701 , H01L21/26513 , H01L29/66575
摘要： The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles (320) to a substrate (330), the beam of charged particles (320) having a given beam divergence, and forming a diverged beam of charged particles (360) by subjecting the beam of charged particles (320) to an energy field (350), thereby causing the beam of charged particles (320) to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles (360) into the substrate (330).
摘要翻译： 本发明提供了一种用于将带电粒子注入基板的方法和用于制造集成电路的方法。 用于将带电粒子注入衬底的方法以及其他步骤包括将带电粒子束（320）投射到衬底（330），具有给定光束发散的带电粒子束（320），并形成发散光束 的带电粒子（360）通过使带电粒子束（320）经受能量场（350），从而使带电粒子束（320）具有较大的光束发散。 该方法然后期望将发散的带电粒子束（360）植入衬底（330）中。
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7.发明申请Method for implanting dopants within a substrate by tilting the substrate relative to the implant source 有权通过使衬底相对于植入源倾斜来在衬底内注入掺杂剂的方法公开(公告)号：US20060073685A1
公开(公告)日：2006-04-06
申请号：US10956583
申请日：2004-10-01
申请人： Said Ghneim , James Bernstein , Lance Robertson , Jiejie Xu , Jeffrey Loewecke
发明人： Said Ghneim , James Bernstein , Lance Robertson , Jiejie Xu , Jeffrey Loewecke
IPC分类号： H01J37/20 , H01L21/265 , H01L21/425
CPC分类号： H01L21/26586 , H01J2237/31701 , H01L21/823814 , Y10S438/914
摘要： The present invention provides a method for implanting a dopant in a substrate and a method for manufacturing a semiconductor device. The method for implanting a dopant, among other steps, including tilting a substrate (310) located on or over an implant platen (305) about an axis in a first direction with respect to an implant source (320) and implanting a portion of an implant dose within the substrate (310) tilted in the first direction. The method further includes tilting the substrate (310) having already been tilted in the first direction about the axis in a second opposite direction, and implanting at least a portion of the implant dose within the substrate (310) tilted in the second opposite direction.
摘要翻译： 本发明提供了一种用于在衬底中注入掺杂剂的方法和用于制造半导体器件的方法。 用于植入掺杂剂的方法以及其它步骤包括使位于植入物台板（305）上方或上方的衬底（310）相对于植入源（320）沿着第一方向的轴线倾斜并植入一部分 在第一方向上倾斜的衬底（310）内的植入剂量。 该方法还包括使已经在第一方向上沿第一方向倾斜的衬底（310）沿着第二相反方向围绕该轴线倾斜，并且将植入剂量的至少一部分植入衬底（310）内沿第二相反方向倾斜。
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公开(公告)号：US07253072B2
公开(公告)日：2007-08-07
申请号：US11006257
申请日：2004-12-07
IPC分类号： H01L21/331
CPC分类号： H01L21/26586 , H01L21/823814 , H01L29/66659
摘要： The present invention provides a method for implanting ions in a substrate and a method for manufacturing an integrated circuit. The method for implanting ions in a substrate, among other steps, including placing a substrate (410) on an implant platen (405) such that a predominant axes (430) of the substrate (410) is rotated about 30 degrees to about 60 degrees or about 120 degrees to about 150 degrees offset from a radial with respect to the implant platen (405), and further wherein the substrate (410) is not tilted. The method further includes implanting ions into the substrate (410), the rotated position of the predominant axes (430) reducing shadowing.
摘要翻译： 本发明提供了一种在衬底中注入离子的方法和用于制造集成电路的方法。 包括将衬底（410）放置在植入台板（405）上以使得衬底（410）的主轴（430）旋转约30度至约60度的方法 或相对于植入台板（405）偏离径向的约120度至约150度，并且其中所述基底（410）不倾斜。 该方法还包括将离子注入到基底（410）中，主轴（430）的旋转位置减少阴影。
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9.发明授权Method of forming sidewall spacers to reduce formation of recesses in the substrate and increase dopant retention in a semiconductor device 有权形成侧壁间隔物以减少衬底中的凹陷的形成并增加半导体器件中的掺杂剂保留的方法公开(公告)号：US08138045B2
公开(公告)日：2012-03-20
申请号：US12122885
申请日：2008-05-19
IPC分类号： H01L21/336
CPC分类号： H01L21/28247 , H01L29/6656
摘要： A method of forming sidewall spacers for a gate in a semiconductor device includes depositing a gate oxide layer over a gate and source/drain regions, and using a thermal anneal to oxidize silicon of the substrate and silicon of the gate after formation of the deposited oxide layer. A sidewall layer is deposited over the oxide layer following the oxidation, and the sidewall layer and oxide layer are patterned to form the sidewall spacers.
摘要翻译： 在半导体器件中形成用于栅极的侧壁间隔物的方法包括在栅极和源极/漏极区域上沉积栅极氧化物层，并且在形成沉积的氧化物之后使用热退火来氧化衬底的硅和栅极的硅 层。 在氧化之后在氧化物层上沉积侧壁层，并且将侧壁层和氧化物层图案化以形成侧壁间隔物。
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10.发明申请METHOD OF FORMING SIDEWALL SPACERS TO REDUCE FORMATION OF RECESSES IN THE SUBSTRATE AND INCREASE DOPANT RETENTION IN A SEMICONDUCTOR DEVICE 有权形成侧壁间隔的方法，以减少在基底中形成的凹陷并增加半导体器件中的氘保持公开(公告)号：US20090286375A1
公开(公告)日：2009-11-19
申请号：US12122885
申请日：2008-05-19
IPC分类号： H01L21/336
CPC分类号： H01L21/28247 , H01L29/6656
摘要： A method of forming sidewall spacers for a gate in a semiconductor device includes re-oxidizing/annealing silicon of the substrate and silicon of the gate after formation of the gate. The substrate is re-oxidized by performing an anneal in an inert atmosphere or ambient. The substrate may be re-oxidized/annealing after depositing an oxide layer covering the substrate and gate. Additionally, the substrate may be re-oxidized/annealing after forming the gate without depositing the oxide layer.
摘要翻译： 在半导体器件中形成用于栅极的侧壁间隔物的方法包括：在栅极形成之后，再次氧化/退火衬底的硅和栅极的硅。 通过在惰性气氛或环境中进行退火，使基板再次氧化。 在沉积覆盖衬底和栅极的氧化物层之后，衬底可以被再氧化/退火。 此外，可以在形成栅极之后再次氧化/退火衬底，而不沉积氧化物层。
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