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公开(公告)号：US07397046B2
公开(公告)日：2008-07-08
申请号：US11025474
申请日：2004-12-29
CPC分类号： H01L21/26513 , H01L22/14 , H01L22/20
摘要： Methods (300, 400) are described for calibrating the implantation angle of an ion implanter utilized in the manufacture of semiconductor products. One method (300) includes implanting (330) phosphorous ions into a pilot wafer held by a wafer platen held at a starting implantation angle in the ion implanter. The phosphorous implantation into a p-doped substrate of the pilot or blank wafer, for example, forms a semiconductive sheet. The method (300) then includes changing the implantation angle (340), and implanting another wafer (330) with phosphorous ions. The angle changing (340) and implanting (330) of other wafers continues in this manner until all wafers or angles are implanted (350) as desired. The phosphorous implanted wafers are then measured (360) with a four-point probe, for example, to obtain the sheet resistance of all the implanted wafers. The difference between the sheet resistances of the wafers at each corresponding implant angle is then obtained (370) to determine a functional relationship between the sheet resistance and the implantation angle. Finally, the functional relationship is then used to calibrate (380) the implantation angle of the implanter. For example, the lowest sheet resistance of the functional relationship may be determined, the relationship normalized to the lowest sheet resistance, then a zero degree implantation angle of the implanter is calibrated to to coincide with the lowest sheet resistance measurement.
摘要翻译： 描述了用于校准在制造半导体产品中使用的离子注入机的注入角度的方法（300,400）。 一种方法（300）包括将磷离子注入到由离子注入机中以起始注入角度保持的晶片压板保持的导向晶片中。 例如，导入或空白晶片的p掺杂衬底中的磷注入形成半导体片。 然后，方法（300）包括改变注入角度（340），以及用磷离子注入另一个晶片（330）。 其他晶片的角度变化（340）和植入（330）以这种方式继续，直到根据需要植入所有晶片或角度（350）。 然后用四点探针测量磷植入的晶片（360），以获得所有植入的晶片的薄层电阻。 然后获得晶片在每个对应植入角度的薄层电阻之间的差异（370），以确定薄层电阻和注入角度之间的函数关系。 最后，功能关系用于校准（380）植入器的植入角度。 例如，可以确定功能关系的最低薄层电阻，将其与最低薄层电阻标准化的关系，然后将注入机的零度注入角度校准为与最低薄层电阻测量一致。
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公开(公告)号：US20060138355A1
公开(公告)日：2006-06-29
申请号：US11025474
申请日：2004-12-29
申请人： Duofeng Yue , Jeffrey Loewecke , JieJie Xu , Thomas Conroy
发明人： Duofeng Yue , Jeffrey Loewecke , JieJie Xu , Thomas Conroy
IPC分类号： H01J37/304
CPC分类号： H01L21/26513 , H01L22/14 , H01L22/20
摘要： Methods (300, 400) are described for calibrating the implantation angle of an ion implanter utilized in the manufacture of semiconductor products. One method (300) includes implanting (330) phosphorous ions into a pilot wafer held by a wafer platen held at a starting implantation angle in the ion implanter. The phosphorous implantation into a p-doped substrate of the pilot or blank wafer, for example, forms a semiconductive sheet. The method (300) then includes changing the implantation angle (340), and implanting another wafer (330) with phosphorous ions. The angle changing (340) and implanting (330) of other wafers continues in this manner until all wafers or angles are implanted (350) as desired. The phosphorous implanted wafers are then measured (360) with a four-point probe, for example, to obtain the sheet resistance of all the implanted wafers. The difference between the sheet resistances of the wafers at each corresponding implant angle is then obtained (370) to determine a functional relationship between the sheet resistance and the implantation angle. Finally, the functional relationship is then used to calibrate (380) the implantation angle of the implanter. For example, the lowest sheet resistance of the functional relationship may be determined, the relationship normalized to the lowest sheet resistance, then a zero degree implantation angle of the implanter is calibrated to to coincide with the lowest sheet resistance measurement.
摘要翻译： 描述了用于校准在制造半导体产品中使用的离子注入机的注入角度的方法（300,400）。 一种方法（300）包括将磷离子注入到由离子注入机中以起始注入角度保持的晶片压板保持的导向晶片中。 例如，导入或空白晶片的p掺杂衬底中的磷注入形成半导体片。 然后，方法（300）包括改变注入角度（340），以及用磷离子注入另一个晶片（330）。 其他晶片的角度变化（340）和植入（330）以这种方式继续，直到根据需要植入所有晶片或角度（350）。 然后用四点探针测量磷植入的晶片（360），以获得所有植入的晶片的薄层电阻。 然后获得晶片在每个对应植入角度的薄层电阻之间的差异（370），以确定薄层电阻和注入角度之间的函数关系。 最后，功能关系用于校准（380）植入器的植入角度。 例如，可以确定功能关系的最低薄层电阻，将其与最低薄层电阻标准化的关系，然后将注入机的零度注入角度校准为与最低薄层电阻测量一致。
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3.发明授权公开(公告)号：US07807978B2
公开(公告)日：2010-10-05
申请号：US12114866
申请日：2008-05-05
CPC分类号： H01L29/78 , H01J2237/31701 , H01L21/26513 , H01L29/66575
摘要： The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles (320) to a substrate (330), the beam of charged particles (320) having a given beam divergence; and forming a diverged beam of charged particles (360) by subjecting the beam of charged particles (320) to an energy field (350), thereby causing the beam of charged particles (320) to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles (360) into the substrate (330).
摘要翻译： 本发明提供了一种用于将带电粒子注入基板的方法和用于制造集成电路的方法。 用于将带电粒子注入衬底的方法以及其他步骤包括将带电粒子束（320）投射到衬底（330），具有给定束束散度的带电粒子束（320）; 以及通过使带电粒子束（320）经受能量场（350）而形成带电粒子（360）的发散束，从而使带电粒子束（320）具有较大的光束发散。 该方法然后期望将发散的带电粒子束（360）植入衬底（330）中。
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4.发明申请公开(公告)号：US20080206971A1
公开(公告)日：2008-08-28
申请号：US12114866
申请日：2008-05-05
IPC分类号： H01L21/265
CPC分类号： H01L29/78 , H01J2237/31701 , H01L21/26513 , H01L29/66575
摘要： The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles (320) to a substrate (330), the beam of charged particles (320) having a given beam divergence; and forming a diverged beam of charged particles (360) by subjecting the beam of charged particles (320) to an energy field (350), thereby causing the beam of charged particles (320) to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles (360) into the substrate (330).
摘要翻译： 本发明提供了一种用于将带电粒子注入基板的方法和用于制造集成电路的方法。 用于将带电粒子注入衬底的方法以及其他步骤包括将带电粒子束（320）投射到衬底（330），具有给定束束散度的带电粒子束（320）; 以及通过使带电粒子束（320）经受能量场（350）而形成带电粒子（360）的发散束，从而使带电粒子束（320）具有较大的光束发散。 该方法然后期望将发散的带电粒子束（360）植入衬底（330）中。
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5.发明申请公开(公告)号：US20080142724A1
公开(公告)日：2008-06-19
申请号：US12039995
申请日：2008-02-29
IPC分类号： G21K1/08
CPC分类号： H01L21/26513 , H01J2237/31701 , H01L29/66575 , H01L29/78
摘要： The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles (320) to a substrate (330), the beam of charged particles (320) having a given beam divergence, and forming a diverged beam of charged particles (360) by subjecting the beam of charged particles (320) to an energy field (350), thereby causing the beam of charged particles (320) to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles (360) into the substrate (330).
摘要翻译： 本发明提供了一种用于将带电粒子注入基板的方法和用于制造集成电路的方法。 用于将带电粒子注入衬底的方法以及其他步骤包括将带电粒子束（320）投射到衬底（330），具有给定光束发散的带电粒子束（320），并形成发散光束 的带电粒子（360）通过使带电粒子束（320）经受能量场（350），从而使带电粒子束（320）具有较大的光束发散。 该方法然后期望将发散的带电粒子束（360）植入衬底（330）中。
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6.发明授权公开(公告)号：US07385202B2
公开(公告)日：2008-06-10
申请号：US11006185
申请日：2004-12-07
CPC分类号： H01L29/78 , H01J2237/31701 , H01L21/26513 , H01L29/66575
摘要： The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles (320) to a substrate (330), the beam of charged particles (320) having a given beam divergence, and forming a diverged beam of charged particles (360) by subjecting the beam of charged particles (320) to an energy field (350), thereby causing the beam of charged particles (320) to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles (360) into the substrate (330).
摘要翻译： 本发明提供了一种用于将带电粒子注入基板的方法和用于制造集成电路的方法。 用于将带电粒子注入衬底的方法以及其他步骤包括将带电粒子束（320）投射到衬底（330），具有给定光束发散的带电粒子束（320），并形成发散光束 的带电粒子（360）通过使带电粒子束（320）经受能量场（350），从而使带电粒子束（320）具有较大的光束发散。 该方法然后期望将发散的带电粒子束（360）植入衬底（330）中。
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7.发明申请公开(公告)号：US20060121706A1
公开(公告)日：2006-06-08
申请号：US11006185
申请日：2004-12-07
申请人： James Bernstein , Lance Robertson , Said Ghneim , Jiejie Xu , Jeffrey Loewecke
发明人： James Bernstein , Lance Robertson , Said Ghneim , Jiejie Xu , Jeffrey Loewecke
IPC分类号： H01L21/425
CPC分类号： H01L29/78 , H01J2237/31701 , H01L21/26513 , H01L29/66575
摘要： The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles (320) to a substrate (330), the beam of charged particles (320) having a given beam divergence, and forming a diverged beam of charged particles (360) by subjecting the beam of charged particles (320) to an energy field (350), thereby causing the beam of charged particles (320) to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles (360) into the substrate (330).
摘要翻译： 本发明提供了一种用于将带电粒子注入基板的方法和用于制造集成电路的方法。 用于将带电粒子注入衬底的方法以及其他步骤包括将带电粒子束（320）投射到衬底（330），具有给定光束发散的带电粒子束（320），并形成发散光束 的带电粒子（360）通过使带电粒子束（320）经受能量场（350），从而使带电粒子束（320）具有较大的光束发散。 该方法然后期望将发散的带电粒子束（360）植入衬底（330）中。
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8.发明申请Method for implanting dopants within a substrate by tilting the substrate relative to the implant source 有权通过使衬底相对于植入源倾斜来在衬底内注入掺杂剂的方法公开(公告)号：US20060073685A1
公开(公告)日：2006-04-06
申请号：US10956583
申请日：2004-10-01
申请人： Said Ghneim , James Bernstein , Lance Robertson , Jiejie Xu , Jeffrey Loewecke
发明人： Said Ghneim , James Bernstein , Lance Robertson , Jiejie Xu , Jeffrey Loewecke
IPC分类号： H01J37/20 , H01L21/265 , H01L21/425
CPC分类号： H01L21/26586 , H01J2237/31701 , H01L21/823814 , Y10S438/914
摘要： The present invention provides a method for implanting a dopant in a substrate and a method for manufacturing a semiconductor device. The method for implanting a dopant, among other steps, including tilting a substrate (310) located on or over an implant platen (305) about an axis in a first direction with respect to an implant source (320) and implanting a portion of an implant dose within the substrate (310) tilted in the first direction. The method further includes tilting the substrate (310) having already been tilted in the first direction about the axis in a second opposite direction, and implanting at least a portion of the implant dose within the substrate (310) tilted in the second opposite direction.
摘要翻译： 本发明提供了一种用于在衬底中注入掺杂剂的方法和用于制造半导体器件的方法。 用于植入掺杂剂的方法以及其它步骤包括使位于植入物台板（305）上方或上方的衬底（310）相对于植入源（320）沿着第一方向的轴线倾斜并植入一部分 在第一方向上倾斜的衬底（310）内的植入剂量。 该方法还包括使已经在第一方向上沿第一方向倾斜的衬底（310）沿着第二相反方向围绕该轴线倾斜，并且将植入剂量的至少一部分植入衬底（310）内沿第二相反方向倾斜。
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9.发明授权Method for implanting dopants within a substrate by tilting the substrate relative to the implant source 有权通过使衬底相对于植入源倾斜来在衬底内注入掺杂剂的方法公开(公告)号：US07232744B2
公开(公告)日：2007-06-19
申请号：US10956583
申请日：2004-10-01
IPC分类号： H01L21/265
CPC分类号： H01L21/26586 , H01J2237/31701 , H01L21/823814 , Y10S438/914
摘要： The present invention provides a method for implanting a dopant in a substrate and a method for manufacturing a semiconductor device. The method for implanting a dopant, among other steps, including tilting a substrate (310) located on or over an implant platen (305) about an axis in a first direction with respect to an implant source (320) and implanting a portion of an implant dose within the substrate (310) tilted in the first direction. The method further includes tilting the substrate (310) having already been tilted in the first direction about the axis in a second opposite direction, and implanting at least a portion of the implant dose within the substrate (310) tilted in the second opposite direction.
摘要翻译： 本发明提供了一种用于在衬底中注入掺杂剂的方法和用于制造半导体器件的方法。 用于植入掺杂剂的方法以及其它步骤包括使位于植入物台板（305）上方或上方的衬底（310）相对于植入源（320）沿着第一方向的轴线倾斜并植入一部分 在第一方向上倾斜的衬底（310）内的植入剂量。 该方法还包括使已经在第一方向上沿第一方向倾斜的衬底（310）沿着第二相反方向围绕该轴线倾斜，并且将植入剂量的至少一部分植入衬底（310）内沿第二相反方向倾斜。
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10.发明申请Method for varying the uniformity of a dopant as it is placed in a substrate by varying the speed of the implant across the substrate 有权通过改变沿衬底的植入物的速度来改变掺杂剂在衬底中的均匀性的方法公开(公告)号：US20060154457A1
公开(公告)日：2006-07-13
申请号：US11033939
申请日：2005-01-12
申请人： Sean Collins , Jeffrey Loewecke , James Bernstein
发明人： Sean Collins , Jeffrey Loewecke , James Bernstein
IPC分类号： H01L21/425
CPC分类号： H01L21/26513 , H01L21/28035
摘要： The present invention provides a method for placing a dopant in a substrate and a method for manufacturing an integrated circuit. The method for placing a dopant in a substrate, among other steps, includes providing a substrate (340) and implanting a dopant within the substrate (340) using an implant (370), the implant (370) moving at varying speeds across the substrate (340) to provide different concentrations of the dopant within the substrate (340).
摘要翻译： 本发明提供了一种在衬底中放置掺杂剂的方法和用于制造集成电路的方法。 用于将掺杂剂放置在衬底中的方法以及其它步骤包括使用植入物（370）提供衬底（340）并且在衬底（340）内注入掺杂剂，所述植入物（370）以变化的速度跨过衬底移动 （340）以在衬底（340）内提供不同浓度的掺杂剂。
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