发明授权
US07385243B2 Floating gate memory cell with a metallic source/drain and gate, and method for manufacturing such a floating gate memory gate cell
有权
具有金属源极/漏极和栅极的浮动栅极存储单元以及用于制造这种浮动栅极存储器栅极单元的方法
- 专利标题： Floating gate memory cell with a metallic source/drain and gate, and method for manufacturing such a floating gate memory gate cell
- 专利标题（中）： 具有金属源极/漏极和栅极的浮动栅极存储单元以及用于制造这种浮动栅极存储器栅极单元的方法
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申请号： US10926838申请日： 2004-08-25
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公开(公告)号： US07385243B2公开(公告)日： 2008-06-10
- 发明人: Andrew Graham , Franz Hofmann , Michael Specht
- 申请人： Andrew Graham , Franz Hofmann , Michael Specht
- 申请人地址： DE
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE
- 代理机构： Dickstein, Shapiro, LLP.
- 优先权： DE10207980 20020225
- 主分类号： H01L29/30
- IPC分类号： H01L29/30
摘要：
Floating gate memory cell having a first layer with first and second source/drain regions and a channel region arranged between and next to the first and second source/drain regions, and a floating gate layer arranged on the first layer, wherein the first and second source/drain regions and the floating gate layer are formed of a metallically conductive material, and the channel region is formed of an electrically insulating material.
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