发明授权
US07387952B2 Semiconductor substrate for solid-state image pickup device and producing method therefor
有权
用于固态图像拾取装置的半导体衬底及其制造方法
- 专利标题： Semiconductor substrate for solid-state image pickup device and producing method therefor
- 专利标题（中）： 用于固态图像拾取装置的半导体衬底及其制造方法
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申请号： US11291955申请日： 2005-12-02
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公开(公告)号： US07387952B2公开(公告)日： 2008-06-17
- 发明人: Shigeru Nishimura , Seiichi Tamura , Hiroshi Yuzurihara
- 申请人： Shigeru Nishimura , Seiichi Tamura , Hiroshi Yuzurihara
- 申请人地址： JP Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Fitzpatrick, Cella, Harper & Scinto
- 优先权： JP2004-358343 20041210
- 主分类号： H01L21/322
- IPC分类号： H01L21/322
摘要：
A semiconductor substrate for forming a pixel area provided surfacially with a plurality of pixels for photoelectric conversion, the semiconductor substrate, including a polysilicon film of a thickness of 0.5-2.0, on a rear surface of the pixel area-bearing surface, and having an oxygen concentration of 1.3-1.5E+18 atom/cm3 (old ASTM).
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