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US07388767B2 Electrochemical lithography memory system and method 失效
电化学光刻记忆系统及方法

  • 专利标题: Electrochemical lithography memory system and method
  • 专利标题(中): 电化学光刻记忆系统及方法
  • 申请号: US11180897
    申请日: 2005-07-13
  • 公开(公告)号: US07388767B2
    公开(公告)日: 2008-06-17
  • 发明人: Sadeg M. Faris
  • 申请人: Sadeg M. Faris
  • 申请人地址: US NY Hawthorne
  • 专利权人: Reveo, Inc.
  • 当前专利权人: Reveo, Inc.
  • 当前专利权人地址: US NY Hawthorne
  • 主分类号: G11C19/08
  • IPC分类号: G11C19/08
Electrochemical lithography memory system and method
摘要:
Electronic memory devices fabricated using nanolithography techniques enables rapid and reliable storage of data on a substrate. One such device includes a memory access head, which includes a conductive member and an insulative member. The conductive member includes a proximal conductive tip, a distal conductive tip, and a body portion. The body portion is embedded in the insulative member. The device further includes a substrate adjacent to the distal conductive tip, an electrolyte disposed between the distal conductive tip and the substrate; and a microchip in communication with the proximal conductive tip.
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