发明授权
- 专利标题： Methods of base formation in a BiCMOS process
- 专利标题（中）： BiCMOS工艺中碱形成的方法
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申请号： US11231385申请日： 2005-09-21
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公开(公告)号： US07390721B2公开(公告)日： 2008-06-24
- 发明人: Peter J. Geiss , Marwan H. Khater , Qizhi Liu , Randy W. Mann , Robert J. Purtell , BethAnn Rainey , Jae-Sung Rieh , Andreas D. Stricker
- 申请人： Peter J. Geiss , Marwan H. Khater , Qizhi Liu , Randy W. Mann , Robert J. Purtell , BethAnn Rainey , Jae-Sung Rieh , Andreas D. Stricker
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 William D. Sabo, Esq.
- 主分类号： H01L21/331
- IPC分类号： H01L21/331
摘要：
Methods for fabricating a heterojunction bipolar transistor having a raised extrinsic base is provided in which the base resistance is reduced by forming a silicide atop the raised extrinsic base that extends to the emitter region in a self-aligned manner. The silicide formation is incorporated into a BiCMOS process flow after the raised extrinsic base has been formed. The present invention also provides a heterojunction bipolar transistor having a raised extrinsic base and a silicide located atop the raised extrinsic base. The silicide atop the raised extrinsic base extends to the emitter in a self-aligned manner. The emitter is separated from the silicide by a spacer.
公开/授权文献
- US20060017066A1 Methods of base formation in a BiCMOS process 公开/授权日：2006-01-26
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