Invention Grant
- Patent Title: Forming field effect transistors from conductors
- Patent Title (中): 从导体形成场效应晶体管
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Application No.: US11037512Application Date: 2005-01-18
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Publication No.: US07390947B2Publication Date: 2008-06-24
- Inventor: Amlan Majumdar , Justin K. Brask , Marko Radosavljevic , Suman Datta , Brian S. Doyle , Mark L. Doczy , Jack Kavalieros , Matthew V. Metz , Robert S. Chau , Uday Shah , James Blackwell
- Applicant: Amlan Majumdar , Justin K. Brask , Marko Radosavljevic , Suman Datta , Brian S. Doyle , Mark L. Doczy , Jack Kavalieros , Matthew V. Metz , Robert S. Chau , Uday Shah , James Blackwell
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: H01L29/12
- IPC: H01L29/12
Abstract:
A nanotube transistor, such as a carbon nanotube transistor, may be formed with a top gate electrode and a spaced source and drain. Conduction along the transistor from source to drain is controlled by the gate electrode. Underlying the gate electrode are at least two nanotubes. In some embodiments, the substrate may act as a back gate.
Public/Granted literature
- US20060157747A1 Forming field effect transistors from conductors Public/Granted day:2006-07-20
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