发明授权
- 专利标题： Forming field effect transistors from conductors
- 专利标题（中）： 从导体形成场效应晶体管
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申请号： US11037512申请日： 2005-01-18
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公开(公告)号： US07390947B2公开(公告)日： 2008-06-24
- 发明人: Amlan Majumdar , Justin K. Brask , Marko Radosavljevic , Suman Datta , Brian S. Doyle , Mark L. Doczy , Jack Kavalieros , Matthew V. Metz , Robert S. Chau , Uday Shah , James Blackwell
- 申请人： Amlan Majumdar , Justin K. Brask , Marko Radosavljevic , Suman Datta , Brian S. Doyle , Mark L. Doczy , Jack Kavalieros , Matthew V. Metz , Robert S. Chau , Uday Shah , James Blackwell
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Trop, Pruner & Hu, P.C.
- 主分类号： H01L29/12
- IPC分类号： H01L29/12
摘要：
A nanotube transistor, such as a carbon nanotube transistor, may be formed with a top gate electrode and a spaced source and drain. Conduction along the transistor from source to drain is controlled by the gate electrode. Underlying the gate electrode are at least two nanotubes. In some embodiments, the substrate may act as a back gate.
公开/授权文献
- US20060157747A1 Forming field effect transistors from conductors 公开/授权日：2006-07-20