Invention Grant
- Patent Title: Capping copper bumps
- Patent Title (中): 封盖铜凸块
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Application No.: US11142971Application Date: 2005-06-01
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Publication No.: US07391112B2Publication Date: 2008-06-24
- Inventor: Jianxing Li , Ming Fang , Ting Zhong , Fay Hua , Kevin J. Lee
- Applicant: Jianxing Li , Ming Fang , Ting Zhong , Fay Hua , Kevin J. Lee
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A structure including a substrate, a copper bump formed over the substrate, and a barrier layer comprising an alloy of at least one of iron and nickel, formed over the copper bump, and methods to make such a structure.
Public/Granted literature
- US20060276022A1 Capping copper bumps Public/Granted day:2006-12-07
Information query
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