Invention Grant
US07393617B2 Single trench repair method with etched quartz for attenuated phase shifting mask 有权
用于衰减相移掩模的具有蚀刻石英的单沟槽修复方法

Single trench repair method with etched quartz for attenuated phase shifting mask
Abstract:
In accordance with the objectives of the invention a new method is provided for the repair of an attenuated phase shifting mask having a contact pattern. The invention etches a single trench in the quartz substrate of the phase shifter mask and removes the impact of a void in the phase shifter material. Alternatively, the invention provides for first conventionally restoring the original dimensions of a contact hole in which a pinhole is present and then etching a single or a double trench in the exposed substrate of the restored contact opening.
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