A metallization surface (5), which acts as an etching stop layer during the production of openings (4) in a passivation layer (3) applied to its upper face and protects an interconnect structure (6) arranged underneath it, is arranged in an uppermost metallization level (1). A further opening is produced in the metal surface (5), through which a focused ion beam is aimed at the interconnect structure (6) in order to connect interconnects to one another and/or to interrupt at least one interconnect. The wiring of the integrated circuit can thus be varied individually, starting from identically produced semiconductor chips.