发明授权
- 专利标题： Semiconductor integrated circuit device and a method of manufacturing the same
- 专利标题（中）： 半导体集成电路器件及其制造方法
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申请号： US10778081申请日： 2004-02-17
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公开(公告)号： US07397104B2公开(公告)日： 2008-07-08
- 发明人: Norio Suzuki , Hiroyuki Ichizoe , Masayuki Kojima , Keiji Okamoto , Shinichi Horibe , Kozo Watanabe , Yasuko Yoshida , Shuji Ikeda , Akira Takamatsu , Norio Ishitsuka , Atsushi Ogishima , Maki Shimoda
- 申请人： Norio Suzuki , Hiroyuki Ichizoe , Masayuki Kojima , Keiji Okamoto , Shinichi Horibe , Kozo Watanabe , Yasuko Yoshida , Shuji Ikeda , Akira Takamatsu , Norio Ishitsuka , Atsushi Ogishima , Maki Shimoda
- 申请人地址： JP Tokyo
- 专利权人： Elpida Memory, Inc.
- 当前专利权人： Elpida Memory, Inc.
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP11-055529 19990303
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A semiconductor integrated circuit device is provided which includes an active region, a shallow groove isolation adjacent to the active region, and a semiconductor element formed in the active region and having a gate. The sum of a width of the active region and a width of the shallow groove isolation constitutes a minimum pitch in the direction of a gate width of the gate, and the width of the active region is set larger than one-half of the minimum pitch.
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