发明授权
- 专利标题： Photoresist topcoat for a photolithographic process
- 专利标题（中）： 光刻面漆，用于光刻工艺
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申请号： US11064871申请日： 2005-02-24
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公开(公告)号： US07399581B2公开(公告)日： 2008-07-15
- 发明人: Robert David Allen , Ratnam Sooriyakumaran , Linda Karin Sundberg
- 申请人： Robert David Allen , Ratnam Sooriyakumaran , Linda Karin Sundberg
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Schmeiser, Olson & Watts
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; G03F7/30 ; G03F7/09 ; G03F7/11
摘要：
A composition that includes functionalized polyhedral oligomeric silsesquioxanes derivatives of the formulas TmR3 where m is equal to 8, 10 or 12 and QnMnR1,R2,R3 where n is equal to 8, 10 or 12 are provided. The functional groups include aqueous base soluble moieties. Mixtures of the functionalized polyhedral oligomeric silsesquioxanes derivatives are highly suitable as a topcoat for photoresist in photolithography and immersion photolithography applications.
公开/授权文献
- US20060189779A1 Photoresist topcoat for a photolithographic process 公开/授权日：2006-08-24
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