发明授权
US07400005B2 Semiconductor memory device having ferroelectric capacitors with hydrogen barriers
失效
具有具有氢屏障的铁电电容器的半导体存储器件
- 专利标题： Semiconductor memory device having ferroelectric capacitors with hydrogen barriers
- 专利标题（中）： 具有具有氢屏障的铁电电容器的半导体存储器件
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申请号： US11142441申请日： 2005-06-02
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公开(公告)号： US07400005B2公开(公告)日： 2008-07-15
- 发明人: Yoshinori Kumura , Iwao Kunishima , Hiroyuki Kanaya , Tohru Ozaki , Kazuhiro Tomioka
- 申请人： Yoshinori Kumura , Iwao Kunishima , Hiroyuki Kanaya , Tohru Ozaki , Kazuhiro Tomioka
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2005-036601 20050214
- 主分类号： H01L29/92
- IPC分类号： H01L29/92
摘要：
A semiconductor memory device, which prevents the penetration of hydrogen or moisture to a ferroelectric capacitor from its surrounding area including a contact plug portion, comprises a ferroelectric capacitor formed above a semiconductor substrate, a first hydrogen barrier film formed on an upper surface of the ferroelectric capacitor to work as a mask in the formation of the ferroelectric capacitor, a second hydrogen barrier film formed on the upper surface and a side face of the ferroelectric capacitor including on the first hydrogen barrier film, and a contact plug disposed through the first and second hydrogen barrier films, and connected to an upper electrode of the ferroelectric capacitor, a side face thereof being surrounded with the hydrogen barrier films.
公开/授权文献
- US20060180894A1 Semiconductor memory device and its manufacturing method 公开/授权日：2006-08-17
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