Method of making a nitrided gate dielectric

Invention Grant

US07402472B2 Method of making a nitrided gate dielectric 失效

Title translation: 制造氮化栅极电介质的方法

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Patent Title: Method of making a nitrided gate dielectric
Patent Title (中): 制造氮化栅极电介质的方法
Application No.: US11067257

Application Date: 2005-02-25
Publication No.: US07402472B2

Publication Date: 2008-07-22
Inventor: Sangwoo Lim , Paul A. Grudowski , Tien Ying Luo , Olubunmi O. Adetutu , Hsing H. Tseng
Applicant: Sangwoo Lim , Paul A. Grudowski , Tien Ying Luo , Olubunmi O. Adetutu , Hsing H. Tseng
Applicant Address: US TX Austin
Assignee: Freescale Semiconductor, Inc.
Current Assignee: Freescale Semiconductor, Inc.
Current Assignee Address: US TX Austin
Agent James L. Clingan, Jr.; Robert L. King
Main IPC: H01L21/336
IPC: H01L21/336

Method of making a nitrided gate dielectric

Abstract:

A gate dielectric is treated with a nitridation step and an anneal. After this, an additional nitridation step and anneal is performed. The second nitridation and anneal results in an improvement in the relationship between gate leakage current density and current drive of the transistors that are ultimately formed.

Abstract(Chinese):

用氮化步骤和退火处理栅极电介质。之后，进行另外的氮化步骤和退火。第二次氮化和退火导致栅极漏电流密度与最终形成的晶体管的电流驱动之间的关系得到改善。

Public/Granted literature

US20060194423A1 Method of making a nitrided gate dielectric Public/Granted day:2006-08-31

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/334	....制造单极型器件的台阶式工艺
H01L21/335	.....场效应晶体管
H01L21/336	......带有绝缘栅的