- 专利标题: Three-dimensional cascaded power distribution in a semiconductor device
-
申请号: US11496120申请日: 2006-07-31
-
公开(公告)号: US07402854B2公开(公告)日: 2008-07-22
- 发明人: Kerry Bernstein , Paul W. Coteus , Philip George Emma , Allan Mark Hartstein , Stephen V. Kosonocky , Ruchir Puri , Mark B. Ritter
- 申请人: Kerry Bernstein , Paul W. Coteus , Philip George Emma , Allan Mark Hartstein , Stephen V. Kosonocky , Ruchir Puri , Mark B. Ritter
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Ryan, Mason & Lewis, LLP
- 代理商 Ido Tuchman
- 主分类号: H01L29/80
- IPC分类号: H01L29/80
摘要:
An IC structure having reduced power loss and/or noise includes two or more active semiconductor regions stacked in a substantially vertical dimension, each active semiconductor region including an active layer. The IC structure further includes two or more voltage supply planes, each of the voltage supply planes corresponding to a respective one of the active layers.