发明授权
- 专利标题: Semiconductor device including a contact connected to the body and method of manufacturing the same
- 专利标题(中): 包括连接到身体的接触件的半导体器件及其制造方法
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申请号: US11210666申请日: 2005-08-25
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公开(公告)号: US07402865B2公开(公告)日: 2008-07-22
- 发明人: Takashi Ipposhi , Toshiaki Iwamatsu , Shigeto Maegawa
- 申请人: Takashi Ipposhi , Toshiaki Iwamatsu , Shigeto Maegawa
- 申请人地址: JP Tokyo
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2004-248181 20040827
- 主分类号: H01L27/01
- IPC分类号: H01L27/01 ; H01L27/12 ; H01L31/0392
摘要:
A Schottky junction is formed at the connection between an SOI layer and a contact (namely, under an element isolation insulating film) without forming a P+ region with a high impurity concentration thereat. The surface of a body contact is provide with a barrier metal. A silicide is formed between the body contact and the SOI layer as a result of the reaction of the barrier metal and the SOI layer.
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