发明授权
- 专利标题: Lateral undercut of metal gate in SOI device
- 专利标题(中): SOI器件中金属栅极的横向底切
-
申请号: US11207051申请日: 2005-08-17
-
公开(公告)号: US07402875B2公开(公告)日: 2008-07-22
- 发明人: Suman Datta , Justin K. Brask , Jack Kavalieros , Brian S. Doyle , Gilbert Dewey , Mark L. Doczy , Robert S. Chau
- 申请人: Suman Datta , Justin K. Brask , Jack Kavalieros , Brian S. Doyle , Gilbert Dewey , Mark L. Doczy , Robert S. Chau
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号: H01L29/72
- IPC分类号: H01L29/72
摘要:
Embodiments of the invention provide a device with a metal gate, a high-k gate dielectric layer, source/drain extensions a distance beneath the metal gate, and lateral undercuts in the sides of the metal gate.
公开/授权文献
- US20070040223A1 Lateral undercut of metal gate in SOI device 公开/授权日:2007-02-22