A test structure for implementing resistance measurement of a deep trench formed in a semiconductor device includes a deep trench formed within a semiconductor substrate. The deep trench has a dielectric material formed on upper portions of sidewall surfaces thereof, and includes a conductive fill material therein. A doped buried plate region encompasses a bottom portion of the deep trench, and a doped horizontal n-well band is in electrical contact with an upper portion of the doped buried plate region. A doped vertical n-well band is in electrical contact with the doped horizontal n-well band.