发明授权
- 专利标题： Microlithographic exposure method as well as a projection exposure system for carrying out the method
- 专利标题（中）： 微光刻曝光方法以及用于实施该方法的投影曝光系统
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申请号： US10949396申请日： 2004-09-27
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公开(公告)号： US07408616B2公开(公告)日： 2008-08-05
- 发明人: Toralf Gruner , Daniel Kraehmer , Michael Totzeck , Johannes Wangler , Markus Brotsack , Nils Dieckmann , Aksel Goehnermeier , Markus Schwab , Damian Fiolka , Markus Zenzinger
- 申请人： Toralf Gruner , Daniel Kraehmer , Michael Totzeck , Johannes Wangler , Markus Brotsack , Nils Dieckmann , Aksel Goehnermeier , Markus Schwab , Damian Fiolka , Markus Zenzinger
- 申请人地址： DE Oberkochen
- 专利权人： Carl Zeiss SMT AG
- 当前专利权人： Carl Zeiss SMT AG
- 当前专利权人地址： DE Oberkochen
- 代理机构： Sughrue Mion, PLLC
- 优先权： DE10346203 20030926
- 主分类号： G03B27/42
- IPC分类号： G03B27/42
摘要：
In an exposure method for exposing a substrate which is arranged in the area of an image plane of a projection objective as well as in a projection exposure system for performing that method, output radiation directed at the substrate and having an output polarization state is produced. Through variable adjustment of the output polarization state with the aid of at least one polarization manipulation device, the output polarization state can be formed to approach a nominal output polarization state. The polarization manipulation can be performed in a control loop on the basis of polarization-optical measuring data.